Accelerated Aging of 808 Nm High-power Semiconductor Laser Diodes

Guo-guang LU,Ge-tao Tao,Sun YAO,Yan-fang Sun,Xiao-nan SAN,Chao WANG,Yun LIU,Li-jun WANG
DOI: https://doi.org/10.3969/j.issn.1001-5868.2005.02.004
2005-01-01
Abstract:Accelerated aging tests w ere carried out under the conditions of constant current and high-temperatures for 808nm high-power Al-free InGaAsP/GaAs lasers.Based on the mean lifetimes of the laser diodes at high-temperatures,the mean lifetimes of lasers at room temperature were extrapolated to be in excess of 30000h.In addition,the cata strophic degradation modes and several methods to prevent this degradation mode are discussed.
What problem does this paper attempt to address?