High Power Pure-Blue Semiconductor Lasers

Osamu Goto,Shigetaka Tomiya,Yukio Hoshina,Takayuki Tanaka,Makoto Ohta,Yoshitsugu Ohizumi,Yoshifumi Yabuki,Kenji Funato,Masao Ikeda
DOI: https://doi.org/10.1117/12.725162
2007-01-01
Abstract:We developed high-power and long-lived AlGaInN-based pure-blue semiconductor lasers emitting in the 440-450 nm wavelength range. The half lifetime (the time for the output power to degrade to half its initial value in constant current mode) was estimated to be more than 10000 hours at a power of 0.75 W under continuous-wave operation at 35 degrees C. Reducing the density of structural defects newly originating from the multiple quantum well active layer and reducing the operating current density were shown to be important for producing high-performance pure-blue lasers.
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