Abstract:Conventional and modified sol–gel processes were used to deposit PZT films with different thicknesses and Zr:Ti ratio on Pt/Ti/SiO2/Si substrates. The crystalline structure and growth behavior of the films have been studied by X-ray diffraction, scanning electron microscopy, and Auger electron spectroscopy. The ferroelectric polarization–electric (P–E) hysteresis loops of the films was also measured and discussed. The structure of piezoelectric element is as (Au or Pt/Ti)/PZT/Pt/Ti multilayer film. Meanwhile, it has a relatively flat surface and each layer exhibits a very dense, uniform, sharp interface. According to the results of P–E hysteresis loops, for given PZT film, the polarization and coercive electric field increase with applied voltage increasing. Furthermore, a new piezoelectric micro-actuator including two PZT elements and a U-type stainless steel substrate for positioning a magnetic head in a high-density hard disc device has been fabricated and investigated. The micro-actuator was also tested in order to investigate the driving mechanics. The results show that the peak-to-peak head displacement of 1.146 μm is achieved when an alternating voltage of ±20 V is applied on a U-type micro-actuator bonding with two 3 μm thick PZT elements and experimental frequency response of the micro-actuator with HSA higher than 22 kHz, yielding the required servo bandwidth (13 kHz).

Growth mechanism and characteristics of Pb(Zr 0.52 Ti 0.48 )O 3 films prepared with alternate deposition of PbZrO 3 and PbTiO 3 layers

Preparation of PZT Thick Film by a High Speed Sol-gel Method

Growth and Characterization of Lead Zirconate Titanate (PZT) Thin Films

Epitaxial growth of (PbZr)TiO3 films on LaAlO3 by sol-gel method using inorganic zirconium source

Low-temperature fabrication of Pb(Zr0.52Ti0.48)O 3 films using a new chemical solution deposition method without post-annealing

Growth and ferroelectric properties of sol-gel derived Pb(Zr,Ti)O3 using inorganic zirconium precursor

Precursor-Monomer Method of Sol-Gel for Fabrication Pt/Pzt/Pt Ferroelectric Films

Preparation and Characterization of Sol–gel Derived (100)-Textured Pb(Zr,Ti)O3 Thin Films: PbO Seeding Role in the Formation of Preferential Orientation

Crystallization Behavior of PZT Film Prepared by Sol–gel Route

Thickness-dependent structural characteristics of sol–gel-derived epitaxial (PbZr)TiO3 films using inorganic zirconium salt

Crystal structure and microstructure of lead zirconate titanate (PZT) thin films with various Zr/Ti ratios grown by hybrid processing

Sol-Gel Process and Properties of Textured Pb(Zr, Ti)O-3 Films on Silicon Wafers

Oriented Growth In Pzt Thin Films

Processing and Thickness Effects on the Microstructure and Electrical Properties of Sol–gel Deposited Pb(Zr, Ti)O3 Films

Preparation and Characterization of Pb(Zr,Ti)O3 Films on SrTiO3 Substrates

Highly (100)-Textured Pb(Zr0.52Ti0.48)O3 Film Derived from a Modified Sol–gel Technique Using Inorganic Zirconium Precursor

Study of silicon-based ferroelectric PZT thin films fabricated by sol-gel method

Interface and Surface Characterization of Lead Zirconate Titanate Thin Films Grown by Sol–Gel Method

Preparation of Pb(Zr0.52TiO0.48)O3 Thin Films at Low-Temperature of Less Than 400°C by Hydrothermal Treatment Following Sol-Gel Deposition

Fabrication of Multilayer Pb(Zr0.53Ti0.47)O3 Film Crystallized by Laser Annealing

Pb(Zr,Ti)O-3 Thin Films Prepared on Pbtio3/Si(100) by Chemical Solution Decomposition Technique