Abstract:The demand for increased information storage densities has pushed silicon technology to its limits and led to a focus on research on novel materials and device structures, such as magnetoresistive random access memory1,2,3 and carbon nanotube field-effect transistors4,5,6,7,8,9, for ultra-large-scale integrated memory10. Electromechanical devices are suitable for memory applications because of their excellent ‘ON–OFF’ ratios and fast switching characteristics, but they involve larger cells and more complex fabrication processes than silicon-based arrangements11,12,13. Nanoelectromechanical devices based on carbon nanotubes have been reported previously14,15,16,17, but it is still not possible to control the number and spatial location of nanotubes over large areas with the precision needed for the production of integrated circuits. Here we report a novel nanoelectromechanical switched capacitor structure based on vertically aligned multiwalled carbon nanotubes in which the mechanical movement of a nanotube relative to a carbon nanotube based capacitor defines ‘ON’ and ‘OFF’ states. The carbon nanotubes are grown with controlled dimensions at pre-defined locations on a silicon substrate in a process that could be made compatible with existing silicon technology, and the vertical orientation allows for a significant decrease in cell area over conventional devices. We have written data to the structure and it should be possible to read data with standard dynamic random access memory sensing circuitry. Simulations suggest that the use of high-k dielectrics in the capacitors will increase the capacitance to the levels needed for dynamic random access memory applications.

A Novel Chain Fram With Driven Plate Read Scheme

Novel Multilevel Non-Destructive-Read-Out (ndro) Ferroelectric Floating-Gate Random Access Memory (Ffram)

A Novel 3D 2TnC FeRAM Architecture and Operation Scheme with Improved Disturbance for High-Bit-Density Dynamic Random-Access Memory

A Novel Capacitorless 1T DRAM with Embedded Oxide Layer

Design of a Novel High Speed Embedded DRAM

A Novel Self-Refreshable Capacitorless DRAM Cell and Its Extended Applications

Realization of A Non-Markov Chain in A Single 2D Crystal RRAM

Nanoscale Memory Cell Based on a Nanoelectromechanical Switched Capacitor

Nanoelectromechanical DRAM for Ultra-Large-scale Integration (ULSI)

Reference Voltage Generation Scheme Enhancing Speed and Reliability for 1t1c‐type FRAM

Research on Circuit Design Techniques for 1 kbit Ferroelectric Random Access Memory

FETRAM. An Organic Ferroelectric Material Based Novel Random Access Memory Cell

Realization of a non-markov chain in a single 2D mineral RRAM

A Novel Non-Planar Cell Structure for Flash Memory

Design of a Novel One Transistor-Dram Based on Bulk Silicon Substrate

A novel high-performance and energy-efficient RRAM device with multi-functional conducting nanofilaments

A Novel 1T-1D DRAM Cell for Embedded Application

Novel Vertical Channel Double Gate Structures for High Density and Low Power Flash Memory Applications.

A Novel Scheme of Cross Bitlines for Feram Array

A Novel Design for Multilevel Storage and Superb Reliability in Phase-Change Memory

A Novel Read Circuit for RRAM Based on RC Delay Effect