Abstract:Complementary FET (CFET) is a promising candidate for CMOS scaling beyond 3-nm technology node. In this article, a novel hybrid channel CFET (HC-CFET) is proposed, which takes advantage of the vertical structure and simultaneously co-optimizes the preferred high-electron/hole-mobility surface of NMOS/PMOS on one substrate. The flexible combination of nanowires (NWs) and nanosheets (NSs) in the HC-CFET allows NMOS to have (100) channel surface orientation, while PMOS has (110) channel surface orientation without increasing the footprint of CFET pillars. Parasitic-aware device to circuit design-technology co-optimization (DTCO) analysis of the HC-CFET is performed based on advanced TCAD simulation of the device and comprehensive HSPICE simulation with TCAD-calibrated compact model. At the device level, the optimization of the channel surface orientation in the HC-CFET enables both NMOS and PMOS to obtain a current gain of more than 20%. By adjusting the wafer orientation and stacking type, HC-CFET exhibits higher frequency gain and comparable energy consumption in ring oscillator (RO) than multiscreen CFET (MS-CFET) and multibridge CFET (MB-CFET). After fully considering the impact of the stacking type on the static random access memory (SRAM) cell structure, (110) wafer together with n-NW on top of p-NS stack is the preferable approach to manufacture HC-CFET, which helps balance the speed, stability, and area of the SRAM cell.

A Novel Technique of Silicon-on-nothing MOSFETs Fabrication by Hydrogen and Helium Co-Implantation

Silicon-on-nothing MOSFETs Fabricated with Hydrogen and Helium Co-Implantation

A Novel Source/drain on Void (SDOV) MOSFET Implemented by Local Co-Implantation of Hydrogen and Helium

Influences Of H-2(+) And He+ Co-Implantation Into Silicon On Electric Characteristics Of Mosfets

A Novel Planar InAs/Si Hetero-TFET with Buried Drain Design and Face-tunneling Technique

45-Nm Node NiSi FUSI on Nitrided Oxide Bulk CMOS Fabricated by a Novel Integration Process

Novel Localized-SOI MOSFET's Combining the Advantages of SOI and Bulk Substrates for Highly-Scaled Devices

A Novel Nanoscaled Device Concept: Quasi-Soi MOSFET to Eliminate the Potential Weaknesses of UTB SOI MOSFET

Experimental investigation of Quasi-SOI MOSFET for highly scaled devices

Preparation of High Conductivity Hydrogenated Silicon-Doped Diamond and MOSFET

Fabrication Of Self-Aligned Drain And Source On Insulator Mosfet With Dielectric Pocket By Local Simox Technology

The Research on the Fabrication of the Novel Basic Unit for 3D Structure Integrated Circuit

First Foundry Platform Demonstration of Hybrid Tunnel FET and MOSFET Circuits Based on a Novel Laminated Well Isolation Technology

Investigation of Novel Hybrid Channel Complementary FET Scaling Beyond 3-nm Node From Device to Circuit

Versatile Approach of Silicon Nanofabrication without Resists: Helium Ion-Bombardment Enhanced Etching

A Novel Tunnel FET Design Through Adaptive Bandgap Engineering with Constant Sub-Threshold Slope over 5 Decades of Current and High $\text{i}_{\mathrm {on}}/\text{i}_{\mathrm {OFF}}$ Ratio

Fabrication of Thin Gate Oxide High-Voltage CMOS

A CMOS Compatible Process for Monolithic Integration of High-Aspect-ratio Bulk Silicon Microstructures

Drain and Source on Insulator MOSFETs Fabricated by Local SIMOX Technology

Experimental Results on Drain and Source on Insulator MOSFETs Fabricated by Local SIMOX Technology

Fabrication and Characterization of a Single Electron Transistor Based on a Silicon-on-Insulator