Simulation and Design of 3d Geometric Rf Ic Inductors by Novel Modeling Tecniques with Magpeec Plus Fastcap (invited Paper)

ZH Feng,HB Long
DOI: https://doi.org/10.1109/iccea.2004.1459272
2005-01-01
Abstract:This paper presents a new peec-based inductor simulation tool, entitled L-Simulator, which employs a novel magPEEC modeling algorithm and an existing FastCap modeling algorithm to address both magnetic and electrical coupling effects respectively in 3D conductor + magnet + dielectric geometries, hence being capable to simulate and design 3D magnetic-enhanced RF IC inductors. Applications on micromachined inductors in 0.2mum GaAs HEMT process and magnetic-cored micro inductors in 0.18mum CMOS technology are discussed.
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