Abstract:Silicon carbide (SiC), an important semiconductor material used in high-power devices, faces the problem of gate oxygen layer formation in traditional Si MOS devices. In view of this, an innovative approach was adopted in the present work to replace the conventional SiO 2 as the gate oxygen layer with a high-k material (ZrO 2 ) so as to investigate its effect on the electrical characteristics of the appliance. In particular ZrO 2 films were deposited on SiC and Si substrates by atomic layer deposition (ALD), and Al was used as the electrode. The atomic force microscopy (AFM) microregion scan revealed a highly flat surface with Rq<1 nm after the ALD growth of ZrO 2 layer. The sample surface analysis via X-ray photoelectron spectroscopy (XPS) suggested the presence of a small amount of ZrO x components. According to the electron energy loss spectrum (EELS), the band gap width (Eg) of this ALD ZrO 2 dielectric was 5.45 eV, which met the requirements for high-quality 4H-SiC-related MOS devices. The electrical properties of the samples were then studied, and the maximum breakdown electric field of the MOS capacitor structure on the SiC substrate was obtained to be more than 10 MV/cm, i.e., nearly twice that of the Si substrate. Based on capacitance-voltage (C-V) measurements, the interface defect density (Dit) near the conduction band of the MOS capacitive structure of the SiC substrate was only on the order of 10 12 eV -1 cm -2 . The movable charge Neffof the oxide layer was also controlled at 10 12 cm -2 . Therefore, the overall performance of the ZrO 2 /SiC structure in terms of electrical properties exceeds that of the ZrO 2 /Si structure and previously reported counterparts. Thus, the combination of the high-k material (ZrO 2 ) and SiC as the substrates in MOS capacitor structures is a very promising research direction.

Growth of c-Axis Oriented Si-Based ZnO Films Using Al as Transitional Films and Fabrication of Its Schottky Diodes

Fabrication and Characteristics of ZnO Thin Films with an Al/Si (100) Substrates

Preparation of ZnO Thin Film Schottky Barrier Diode

Microstructure and Electrical Properties of Al-doped ZnO Thin Films

Crystal characterization of zinc oxide thin film

Electronic properties of ZrO<sub>2</sub> films fabricated via atomic layer deposition on 4H-SiC and Si substrates

Effect of Si substrate orientation on morphology and electrical properties of ZnO : Al films

Growth and Characteristics of p-Type ZnO Films Doped with Al and N

Study on Chemical Solution Deposition of Aluminum-Doped Zinc Oxide Films

Oriented growth of ZnO nanostructures on Si and Al substrates

Synthesis of ZnAl 2 O 4 /Α-Al 2 O 3 Complex Substrates and Growth of GaN Films

Study on Al doped ZnO transparent conducting films

Electronic Properties of ZrO2 Films Fabricated via Atomic Layer Deposition on 4H-SiC and Si Substrates

Synthesis of ZnAl2O4/alpha-Al2O3 complex substrates and growth of GaN films

Gold Schottky Contacts on N-Type ZnO Thin Films with an Al/Si(1 0 0) Substrates

Microstructure dependence of ZnO:Al films on the deposition conditions and the surface morphology of silicon substrate

Epitaxial growth of ZnO on (1 1 1) Si free of an amorphous interlayer

Study on the growth of Al-doped ZnO thin films with (112̄0) and (0002) preferential orientations and their thermoelectric characteristics

The structure and optical characters of the ZnO film grown on GaAs/Al2O3 substrate

Sputtering Deposited Ternary Zn1−xCdxO Crystal Films on Si(111) Substrates

Synthesis and Characterization of Al-N Codoped Zn_(1-x)Mg_xO Thin Films