Preparation of ZnO Thin Film Schottky Barrier Diode

叶志镇,李蓓,黄靖云,袁国栋,赵炳辉

DOI: https://doi.org/10.3321/j.issn:1000-7032.2004.03.012

2004-01-01

Chinese Journal of Luminescence

Abstract:The ZnO thin film has been deposited on Al/Si (100) substrated by direct current (DC) reactive magnetron sputtering method. The ZnO Schottky Barrier Diode (SBD) has been fabricated using Al and Pt as ohmic and Schottky contacts, respectively. X-ray diffraction (XRD) measurement indicated that the ZnO thin film was well c-axis oriented. The atomic force microscope (AFM) showed that ZnO thin film had a smooth surface and the grain size was about 100 nm. The spreading resistance profile (SRP) indicated that the thickness and carrier concentration of ZnO film was 0.4 μm and 1.8×1015 cm-3, respectively. The Hall effect measurements showed that ZnO thin film was of n-type conductivity. The current-voltage measurements indicated and evident rectifying characteristic of ZnO SBD. The barrier height between Pt and n-type ZnO was 0.54 eV. This is the first attempt toward ZnO thin film SBD, which has not been reported before and the performance of the ZnO SBD could be improved by optimizing the device structure and technology.