Abstract:Thermal atomic layer etching is rapidly becoming an important complementary processing technology in the manufacturing of 5 and 3 nm devices in the semiconductor industry. Critically, architectures such as 3D NAND and 3D DRAM require conformal isotropic etching to remove material such as HfO 2 in hard-to-reach locations with aspect ratios that can be greater than 50:1. To achieve repeatable device performance throughout a 3D stack, the removal rate (etch per cycle) of the etched material during an etch process needs to be controlled such that the overall etch amount is the same from top to bottom of the device stack. In this work, the reaction kinetics of reactants and byproducts during a cyclical ligand exchange-based atomic layer etching (ALE) process have been modelled. This ALE process consists of two steps: a fluorination step followed by a fluorine-to-chlorine ligand exchange-based removal step. Modeling was performed for each of those steps separately. Experimental data revealed that the fluorine dosing during the fluorination step was predominantly responsible for controlling the etch rate of the ALE process but had only a minimal impact on the etch profile inside high aspect ratio holes. The ligand exchange dosing, on the other hand, predominantly controlled the etch profile (depth loading) with equal etch rates from top-to-bottom, obtained when the step was operated close to saturation. The model predicts that the chemical reaction rate of dimethylaluminum chloride (DMAC) on a fluorinated surface during the ligand exchange step is 9.1 s −1 , about 46 times greater than the reaction rate of hydrogen fluoride (HF) on the hafnium oxide surface during the fluorination step (only 0.2 s −1 ). Furthermore, modeling results revealed that the sticking coefficient for DMAC on a hafnium fluoride surface far exceeded that of HF on a hafnium oxide surface in the conditions modelled (0.94 s −1 for DMAC vs 0.0058 s −1 for HF). With these modeling results, the different roles fluorination and ligand exchange steps have regarding the control of etch rate per cycle and profile inside high aspect ratio holes can be explained.

Reactive Ion Etching of HfO2 Films

Reactive Ion Beam Etching of Hfo2 Film Using Ar/Chf3 Gas Chemistries

Dry Etching of HfO2 and SiO2 Optical Thin Films

Selective atomic layer etching of HfO2 over silicon by precursor and substrate-dependent selective deposition

Plasma Enhanced Atomic Layer Deposition of HfO2 with in Situ Plasma Treatment

Reactive Ion Beam Etching of Hfo2 Film and Removal of Sidewall Redeposition

Influence of Dry Etching on the Properties of SiO2 and HfO2 Single Layers.

Reactive ion etching of plasma enhanced chemical vapor deposition amorphous silicon and silicon nitride: Feeding gas effects

Facing-target Mid-Frequency Magnetron Reactive Sputtered Hafnium Oxide Film: Morphology and Electrical Properties

Ion-Enhanced Etching Characteristics of sp2-Rich Hydrogenated Amorphous Carbons in CF4 Plasmas and O2 Plasmas

Optimization Study on the Reactive Ion Etching for SiO_2

Reactive ion etching of SiC thin films using fluorinated gases

Temperature Dependence on Dry Etching of Hafnium Oxide Using an Inductively Coupled Plasma

Reactive ion etching of RuO2 thin films using the gas mixture O2/CF3CFH2

Dry Etching of TaN/HfO2 Gate Stack Structure by Cl2/SF6/Ar Inductively Coupled Plasma

Surface reaction modelling of thermal atomic layer etching on blanket hafnium oxide and its application on high aspect ratio structures

Study of HfO2 Thin Films Prepared by Electron Beam Evaporation

Investigation of SiO2 Etch Characteristics by C6F6/Ar/O2 Plasmas Generated Using Inductively Coupled Plasma and Capacitively Coupled Plasma

Electron dynamics and SiO2 etching profile evolution in capacitive Ar/CHF3 discharges driven by sawtooth-tailored voltage waveforms

Deep Reactive Ion Etching of Commercial Pmma in O-2/Chf3, and O-2/Ar-Based Discharges

Inductively Coupled Plasma Reactive Ion Etching of ZnO Films in HBr/Ar Plasma