Abstract:A bottom-up approach starting with the development of new Hf precursors for plasma-enhanced atomic layer deposition (PEALD) processes for HfO2 followed by in situ thin-film surface characterization of HfO2 upon exposure to reactive gases via near-ambient-pressure X-ray photoelectron spectroscopy (NAP-XPS) is reported. The stability of thin films under simulated operational conditions is assessed, and the successful implementation of HfO2 dielectric layers in metal-insulator-semiconductor (MIS) capacitors is demonstrated. Among the series of newly synthesized mono-guanidinato-tris-dialkyl-amido class of Hf precursors, one of them, namely, [Hf{η2-(iPrN)2CNEtMe}(NEtMe)3], was representatively utilized with oxygen plasma, resulting in a highly promising low-temperature PEALD process at 60 °C. The new precursors were synthesized in the multigram scale and thoroughly characterized by thermogravimetric analyses, revealing high and tunable volatility reflected by appreciable vapor pressures and accompanied by thermal stability. Typical ALD growth characteristics in terms of linearity, saturation, and a broad ALD window with constant growth of 1.06 Å cycle-1 in the temperature range of 60-240 °C render this process very promising for fabricating high-purity smooth HfO2 layers. For the first time, NAP-XPS surface studies on selected HfO2 layers are reported upon exposure to reactive H2, O2, and H2O atmospheres at temperatures of up to 500 °C revealing remarkable stability against degradation. This can be attributed to the absence of surface defects and vacancies. On the basis of these promising results, PEALD-grown HfO2 films were used as dielectric layers in the MIS capacitor device fabrication exhibiting leakage current densities less than 10-7 A cm-2 at 2 MV cm-1 and permittivities of up to 13.9 without postannealing.

Plasma Enhanced Atomic Layer Deposition of HfO2 with in Situ Plasma Treatment

Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Hfo2/Al2o3 Nanolaminate Structure on Si

Properties of HfAlO Film Deposited by Plasma Enhanced Atomic Layer Deposition

Atomic Layer Deposition of High Quality HfO2 Using In-Situ Formed Hydrophilic Oxide As an Interfacial Layer

Liquid Phase Deposition of Hafnium Oxide Thin Films

Fabrication and Characterization of Pulsed Laser Deposited Hfo2 Films for High-K Gate Dielectric Applications

Interface Optimization and Characterization of PEALD HfO2 Gate Dielectric Film

Total-Dose Radiation Response of HfLaO Films Prepared by Plasma Enhanced Atomic Layer Deposition

Interfacial Structure and Electrical Properties of Ultrathin HfO2dielectric Films on Si Substrates by Surface Sol–gel Method

Phase Separation and Interfacial Reaction of High-K HfAlOx Films Prepared by Pulsed-Laser Deposition in Oxygen-Deficient Ambient

PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases.

Surface Passivation of Silicon Using HfO 2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System

Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide (SiO2 or Si–O–N) underlayers

Thin Hfo2 Films Grown on Si(100) by Atomic Oxygen Assisted Molecular Beam Epitaxy

Effects of Plasma Immersion Ion Nitridation on Dielectric Properties of Hfo2

Facing-target Mid-Frequency Magnetron Reactive Sputtered Hafnium Oxide Film: Morphology and Electrical Properties

Properties of HfLaO MOS Capacitor Deposited on SOI with Plasma Enhanced Atomic Layer Deposition

Interfacial and Electrical Characterization of HfO2 Gate Dielectric Film with a Blocking Layer of Al2O3

Synthesis and Characterization of HfO2 and ZrO2 Thin Films Deposited by Plasma Assisted Reactive Pulsed Laser Deposition at Low Temperature

Preparation Of Hfo(2) Thin Film Through Self-Assembled Monolayers On Si Substrate

Fabrication and characterization of La-doped HfO2 gate dielectrics by metal-organic chemical vapor deposition