Deep Reactive Ion Etching of Commercial Pmma in O-2/Chf3, and O-2/Ar-Based Discharges

CC Zhang,CS Yang,DF Ding
DOI: https://doi.org/10.1088/0960-1317/14/5/001
2004-01-01
Journal of Micromechanics and Microengineering
Abstract:The reactive ion etching of PMMA in O-2, O-2/CHF3 and O-2/Ar discharges has been examined as a function of bias voltage, flow rate and composition of the gas mixtures. Etching in O-2, O-2/CHF3 and O-2/Ar plasmas (with a flow ratio of Ar/O-2 less than or equal to 50%) shows higher ion-enhanced chemical etching dependence than in O-2/Ar (with a flow ratio of Ar/O-2 greater than or equal to 50%). In Ar/O-2 plasmas, with an increasing proportion of Ar, the dominant process changed from an ion-enhanced chemical process with high values of etch rate to a physical sputtering etch process. PMMA etched in O-2 (10 SCCM)/Ar (40 sccm) produced a smooth and vertical sidewall. With an increasing amount of CHF3, the etch rates of PMMA show a larger dependence on physical sputtering and a gradual decrease. When the depth of PMMA etched in O-2 (25 sccm)/CHF3 (25 sccm) is about, 100 mum the profile is vertical, but the sidewall surface is rough.
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