Influence of Annealing on the Magneto-Resistance Effect and Microstructure in the Two-Step Oxidized Feco/Alox/Co Tunnel Junction

B You,WT Sheng,L Sun,W Zhang,J Du,M Lu,HR Zhai,A Hu,QY Xu,YG Wang,Z Zhang
DOI: https://doi.org/10.1088/0022-3727/36/19/001
2003-01-01
Abstract:The FeCo/AlOx/Co magnetic tunnel junction was fabricated using a two-step plasma oxidation technique. The tunnelling magneto-resistance ratio of the junction as-deposited was about 8.5%, and reached 14.0% after annealing at 200 degreesC. Transmission electron microscopy, high-resolution electron microscopy and electron holography were used to study the microstructure of the junction. The enhancement of the magneto-resistance effect after annealing could be attributed to the uniformity of the barrier layer, the improvement of FM/I interfaces, and the deoxidization of the bottom ferromagnetic electrode.
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