Abstract:The GaN films grown on sapphire by metal-organic chemical vapor deposition (MOCVD) have excellent crystalline quality (χmin=2.00%). Combining Rutherford backscattering/channeling (RBS/C) and high-resolution X-ray diffraction (HXRD) measurements, we investigate the radiation damage in GaN films with various doses and angles of Mg+-implantation. The results of experiments reveal that the radiation damage rises with the increasing implantation dose. Under the dose of 1×1015atom/cm2, χmin is less than 4.78%, and when implantation dose exceeds the threshold of 1×1016atom/cm2, χmin will be up to 29.5%. Random implantation causes more serious damage than channeled implantation, and in a definite range the damage level rises with a larger implantation angle. At the implantation angles of 0°,4°,6°and 9°deviating from〈0001〉, χmin(%)is 6.28,8.46,10.06 and 10.85, respectively, at a dose of 4×1015atom/cm2. After annealing at 700℃ for 10min and then 1050℃ for 20s, the damage recovers to some extend. The crystalline quality of the sample with 1×1016atom/cm2 implanted was reduced to 19.08%. In addition, the annealing condition of 1000℃ for 30s is more efficient and the damage recovers better.

Recrystallization Behavior of High-Dose Mn + -Implanted GaAs

Study on the Raman Scattering Measurements of Mn Ion Implanted Gan

Nano-clusters structure and magnetic properties of high fluence Mn+ ion-implanted GaN

Unidirectional Expansion of Lattice Parameters in GaN Induced by Ion Implantation

Ferromagnetic Properties And Structures Of The Mn-Implanted Gaas Semiconductor

Detail Study on Lattice Deformation and Recovery of GaN by Mg-ion-implantation and the Subsequent Thermal Annealing

Investigation of Mn-implanted n-Si by low-energy ion beam deposition

Mn incorporation in as-grown and annealed (Ga,Mn)As layers studied by x-ray diffraction and standing-wave uorescence

Study of Radiation Damage in Mg+-implanted GaN

Investigation of Mn-implanted n-type Ge

Study of Mn- Implanted N- Type Ge

Optical and Structural Properties of Mn-Implanted GaN Films

Influence of Implanted Mg Concentration on Defects and Mg Distribution in GaN

Crystallographically Oriented Zn Nanocrystals Formed in Zno by Mn+-Implantation

Enhanced Damage Buildup in C+-implanted GaN Film Studied by a Monoenergetic Positron Beam

Structural and Electrical Characterizations of Si-implanted GaN with a High Dose at Elevated Temperatures

Formation process and superparamagnetic properties of (Mn,Ga)As nanocrystals in GaAs fabricated by annealing of (Ga,Mn)As layers with low Mn content

Observation of Room Temperature Ferromagnetism and Exchange Bias in a 55mn+ Ion-Implanted Unintentionally Doped Β-Ga2o

Ferromagnetic properties and structure of MnPLU ion-implanted GaAs

Spatially controlled formation of superparamagnetic (Mn,Ga)As nanocrystals in high temperature annealed (Ga,Mn)As/GaAs superlattices

The Effect of Mn Interstitials on the Lattice Parameter of Ga(1-x)Mn(x)As