Abstract:In this work, we use ion implantation to implant Mn ions and As ions into the ZnO films prepared by molecular beam epitaxy. The surface morphology and crystalline structure of ZnO thin films are investigated by X-ray diffraction, atomic force microscopy and Raman spectroscopy. First-principles calculations discover the halfmetallic property of the ZnO films implanted with Mn ions. The effects of Mn ions and As ions implantation on the absorption edges, refractive index (n), extinction coefficient (k) and dielectric constant of ZnO films are studied by transmission spectra, absorption spectroscopy and spectroscopic ellipsometric technique. From the spectroscopic ellipsometry (SE), the n and k of the films have increased after ion implantation. Due to the halfmetallic properties of the Mn-implanted ZnO film, the variation trend of the peaks of n and k with wavelength is much gentler than the peak of unimplanted ZnO film. The dielectric constant measured by SE and the results of photoluminescence spectra reveal that the electron transition of ZnO films is weakened by Mn ions implantation. The results provide a new direction for the design and optimization of optoelectronic devices based on ZnO thin films with semi-metallic properties.

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