Abstract:Intrinsic, P- and B-doped hydrogenated amorphous silicon thin films were prepared by plasma-enhanced chemical vapor deposition technique. As-deposited samples were thermally annealed at the temperature of 800°C to obtain the doped nanocrystalline silicon (nc-Si) films. The microstructures, optical and electronic properties have been evaluated for the undoped and doped nanocrystalline films. X-ray photoelectron spectroscopy (XPS) measurements demonstrated the presence of the substitutional boron and phosphorous in the doped films. It was found that thermal annealing can efficiently activate the dopants in films accompanying with formation of nc-Si grains. Based on the temperature-dependent conductivity measurements, it was shown that the activation of dopant by annealing increased the room temperature dark conductivity from 3.4×10−4Scm−1 to 5.3Scm−1 for the P-doped films and from 1.28×10−3Scm−1 to 130Scm−1 for the B-doped films. Meanwhile, the corresponding value of conductivity activation energies was decreased from 0.29eV to 0.03eV for the P-doped films and from 0.3eV to 5.6×10−5eV for the B-doped films, which indicated the doped nc-Si films with high conductivity can be achieved with the present approach.

Influence of Boron Doping on Conductivity of Amorphous Silicon Films and Photovoltaic Efficiency of Solar Cells

Influence of Boron-doping on Electrical Properties of Na-Si:H Thin Film Prepared by PECVD

Investigation of Microstructure and Photoelectric Properties of Boron- Doped Amorphous Silicon Films

Growth and Characterization of Boron-Doped na-Si:H Films Used as Window Layer Material of Solar Cells

Study on solid-phase crystallization of B-doped a-Si:H film

Effect of Boron Doping on the Electrical Conduction of Tetrahedral Amorphous Carbon Films

Electrical and Optical Properties of Boron‐doped Nanocrystalline Silicon Films Deposited by PECVD

Effects Of Electrolytic Parameters On The Deposition Of Boron At The Cathode During Molten Salt Electrolysis Of Silicon

Influence of boron on the properties of intrinsic microcrystalline silicon thin films

The Location and Doping Effect of Boron in Si Nanocrystals Embedded Silicon Oxide Film

Photovoltaic Characteristics of Amorphous Silicon Solar Cells Using Boron Doped Tetrahedral Amorphous Carbon Films As P-Type Window Materials

Boron doped amorphous diamond window layer deposited by filtered arc for amorphous silicon alloy p–i–n solar cells

High-conductive Nanocrystalline Silicon with Phosphorous and Boron Doping

First-Principles Study of 2.2 Nm Silicon Nanocrystals Doped with Boron

Study of Boron-Doped Zinc Oxide Film Serving As Front Contact with High Haze Used in Amorphous Silicon Thin Film Solar Cells

Efficiency improvement of crystalline silicon solar cells with a back-surface field produced by boron and aluminum co-doping

Boron Doping of Graphene for Graphene–Silicon P–n Junction Solar Cells

Deposition of Boron-Doped Nanocrystalline Silicon Carbide Thin Films Using H2-Ar Mixed Dilution for the Application on Thin Film Solar Cells

Light-induced activation of boron doping in hydrogenated amorphous silicon for over 25% efficiency silicon solar cells

Boron-doping of cubic SiC for intermediate band solar cells: a scanning transmission electron microscopy study

Doping silicon nanocrystals with boron and phosphorus