Abstract:In this study, p-type CuInSe 2 (CIS) films were prepared by selenization of one-step electrodeposited Cu-In-2Se (atomic ratio) precursors. To obtain high-quality, dense, and homogeneous CIS films for solar cell application, the effects of substrate temperatures during selenization and precursor compositions on the final microstructures were systematically investigated. The precursor layers evolved in very different ways under different selenization conditions. The final microstructures and phases of the films depended critically on the precursor compositions, selenization temperature, and the selenization thermal process history. Low melting temperature Cu x Se phase, which tended to segregate at the film surface, can efficiently assist the CIS grain growth. Large hexagonal CuSe platelets were formed at a temperature as low as 170 °C in Cu-rich precursor, which acted as an element-transport flux agent at higher temperature under high Se vapor and reacted with In-Se selenide to form CIS at temperatures above 500 °C. Good crystalline quality chalcopyrite CIS film was obtained at a selenization temperature of 550 °C.

STUDY ON STRUCTURE PROPERTIES OF CuInSe2 THIN FILMS BY ALLOYS PRECURSORS POST-SELENIZATION

Research on CuInS2 Thin Films Prepared by One-step Electrodeposition

P-type CuInSe 2 Thin Films Prepared by Selenization of One-Step Electrodeposited Precursors

Growth of CIS Thin Films by Selenization of Co-evaporated Cu-In Alloy

Effects of Composition Segregation in Cu-In Precursor Films on Microstructures of CIS Films

Preparation And Characterization Of Cu(In,Ga)Se-2 Thin Films By Selenization Of Cu0.8ga0.2 And In2se3 Precursor Films

Study of In-Se binaries of In-rich CuInSe 2 thin film prepared by selenization after cosputtering

Fabrication and Characterization of Copper–indium–diselenide (cuinse2, CIS) Thin Film Using One-Step Electro-Deposition Process

Selenization Temperature and Properties of CuInSe2 Films

Preparation of CuInSe2 thin films by pulsed laser deposition the Cu–In alloy precursor and vacuum selenization

Optimization of Fabrication Parameters of CuInSe2 Thin Films by DC-Magnetron Sputtering the Metal Precursor Followed by Selenization

Preparation Of Cu(In1-Xalx)Se-2 Thin Films By Sol-Gel Method

Preparation of Cu(In 1−x Al x )Se 2 thin films by sol-gel method

Effects of Cu-In Precursor Film Phase Structure on CuInSe2 Film Properties

Preparation of Cu(In1−xAlx)Se2 thin films by sol-gel method

Preparation and Characterization of Electrodeposited-Annealed CuInSe2 Thin Films for Solar Cells

Investigation of CuIn1-xAlxSe2 Thin Film for Solar Cells Prepared by a Selenization Process

Phase transform based on temperature distribution by post-sputtering selenization

Local Segregation in Cu-In Precursors and Its Effects on Microstructures of Selenized Cuinse2 Thin Films

A Low-Cost Processing of CuIn(SexSi1-x)2 Films: Using Sulfides Nanoparticle Precursors

The Influence of Selenization Temperature on the Properties of CuInGaSe2 Thin Film