Abstract:This work examines Cu(In,Ga)Se2 thin films fabricated by (1) selenization of pre-sputtered Cu-In-Ga and (2) co-evaporation of each constituent. The efficiency disparity between films deposited via these two methods is linked to differences in morphology and microstructure. Atomic force microscopy and scanning electron microscopy show that selenized films have rougher surfaces and poor adhesion to molybdenum back contact. Transmission electron microscopy and electron energy loss spectroscopy revealed multiple voids near the Mo layer in selenized films and a depletion of Na and Se around the voids. Residual stresses in co-evaporated films were found to be ∼1.23 GPa using wafer curvature measurements. Uniaxial compression experiments on 500 nm-diameter nanopillars carved out from co-evaporated films revealed the elastic modulus of 70.4 ± 6.5 GPa. Hertzian contact model applied to nanoindentation data on selenized films revealed the indentation modulus of 68.9 ± 12.4 GPa, which is in agreement with previous reports. This equivalence of the elastic moduli suggests that microstructural differences manifest themselves after the yield point. Typical plastic behavior with two distinct failure modes is observed in the extracted stress-strain results, with the yield strength of 640.9 ± 13.7 MPa for pillars that failed by shearing and 1100.8 ± 77.8 MPa for pillars that failed by shattering.

Study of In-Se binaries of In-rich CuInSe 2 thin film prepared by selenization after cosputtering

Local Segregation in Cu-In Precursors and Its Effects on Microstructures of Selenized Cuinse2 Thin Films

Phase transform based on temperature distribution by post-sputtering selenization

Preparation And Characterization Of Cu(In,Ga)Se-2 Thin Films By Selenization Of Cu0.8ga0.2 And In2se3 Precursor Films

Optimization of Fabrication Parameters of CuInSe2 Thin Films by DC-Magnetron Sputtering the Metal Precursor Followed by Selenization

Study on How the Content of Selenium in the Precursors Influences the Properties of CuInSe2 Thin Films

Preparation of CuInSe2 thin films by selenization of co-sputtered Cu-In precursors using rapid thermal processing

Research on CuInS2 Thin Films Prepared by One-step Electrodeposition

Strength, stiffness, and microstructure of Cu(In,Ga)Se2 thin films deposited via sputtering and co-evaporation

Effects of different sulfurization conditions on the characterization of CuIn(S x Se 1− x ) 2 thin films

Growth of CIS Thin Films by Selenization of Co-evaporated Cu-In Alloy

The Influence of Selenization Temperature on the Properties of CuInGaSe2 Thin Film

Microstructure evolution of CuInSe2 thin films prepared by single-bath electrodeposition

P-type CuInSe 2 Thin Films Prepared by Selenization of One-Step Electrodeposited Precursors

Structural properties of CuInSe2 films prepared by selenization of metallic precursors on MoNx film substrates

Preparation of CuInSe2 thin films by pulsed laser deposition the Cu–In alloy precursor and vacuum selenization

Characterization of Structure and Physical Properties of CuInSe2 Films Prepared from Chlorides under Different Conditions

Selenization Temperature and Properties of CuInSe2 Films

Fabrication and Characterization of Copper–indium–diselenide (cuinse2, CIS) Thin Film Using One-Step Electro-Deposition Process

Preparation and Characterization of Cuins2 Thin Films for Solar Cells by Chemical Bath Deposition

A Low-Cost Processing of CuIn(SexSi1-x)2 Films: Using Sulfides Nanoparticle Precursors