Optical properties of GaAs nano-granular embedded in SiO2 matrix prepared by RF magnetron cosputtering technique

Ruiqin Ding,Hao Wang,Yingmin Yu,NingJuan Wang,Weilong She,Runhua Li,Zhiren Qiu,Li Luo,Zhigang Cai,Wingyiu Cheung,Saipeng Wong

2002-01-01

Abstract:Films of GaAs nano-grains embedded in a SiO2 matrix have been prepared by radio frequency magnetron co-sputterring technique followed by vacuum annealing. Results of X-ray diffraction experiments suggest the existence of GaAs nanocrystals with fcc structure in the SiO2 matrix by annealing at higher temperatures, and the average diameter varies from 1.5 to 3.2nm. Very large blueshifts of absorption edge ranging from 1.5 to 2.0 eV with respect to that of bulk GaAs exhibit in the absorption spectra. Room temperature photoluminescence spectra show a double-peak ultraviolet photoluminescence which originates from the radiative recombination of the quantum confined electron-heavy hole excitons and electron-split-off hole excitons and the peaks in the visual region correspond to the deep traps far below the band edge. The great discrepancy between the absorption blue shifts from experiment and effective mass model as well as the formation and characteristics of photoluminescence spectra are explained. Nonlinear optical property of the film annealed at 500°C has been measured by laser Z-scan technique, and the result shows that both the nonlinear refractive index and absorption coefficient of the composite film under non-resonant condition are all 5 orders of magnitude greater than those of the bulk GaAs, and these mainly result from the strong quantum confinement.