Abstract:Photoluminescent (PL) p-type 6H porous silicon carbides (PSCs), which showed a strong blue-green photoluminescence band centered at approximately 490nm, were annealed in Ar and vacuum conditions. The morphological, optical, and chemical states after annealing are reported on electrochemically etched SiC semiconductors.The thermal treatments in the Ar and vacuum environments showed different trends in the PL spectra of the PSC. In particular, in the case of annealing in a vacuum, the PL spectra showed both a weak red PL peak near 630nm and a relatively intense PL peak at around 430nm in the violet region. SEM images showed that the etched surface had spherical nanostructures, mesostructures, and islands. With increasing annealing temperature it changes all spherical nanostructures. The average pore size observed at the surface of the PSC before annealing was of the order of approximately 10nm.In order to investigate the surface of a series of samples in detail, both the detection of a particular chemical species and the electronic environments at the surface are examined using X-ray photoelectron spectroscopy (XPS). The chemical states from each XPS spectrum depend differently before and after annealing the surface at various temperatures. From these results, the PL spectra could be attributed not only to the quantum size effects but also to the oxide state.

Intense two-band photoluminescence from silicon carbide embedded in SiO2 matrix

Photoluminescence of Polycrystalline SiC Sintered from Graphite and Si Melt

Photoluminescence from Β-Sic Nanocrystals Embedded in SiO2 Films Prepared by Ion Implantation

Photoluminescence from C+-Implanted Sinxoy Films Grown on Crystalline Silicon

Blue-green luminescence and SERS study of carbon-rich hydrogenated amorphous silicon carbide films with multiphase structure

Photoluminescence From C-60-Coupled Porous Structures Formed On Fe+-Implanted Silicon

Time-Resolved Photoluminescence Spectra Of Strong Visible Light-Emitting Sic Nanocrystalline Films On Si Deposited By Electron-Cyclotron-Resonance Chemical-Vapor Deposition

Hydrogenated Nanocrystalline Silicon Carbide Films Synthesized by ECR-CVD and Its Intense Visible Photoluminescence at Room Temperature

Luminescence from Si/SiO 2 with Si Implantation

Optical Emission from Annealed Coupled-C-60 Porous Si Systems

Structural and band tail state photoluminescence properties of amorphous SiC films with different amounts of carbon

Photo- and electro-luminescence at 1.54 μm from Er3+ in SiC:Er2O3 films and structures

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

Pseudo Nanocrystal Silicon Induced Luminescence Enhancement in A-Si /sio 2 Multilayers

Photoluminescent properties of silicon carbide and porous silicon carbide after annealing

Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

Origin and Evolution of Photoluminescence from Si Nanocrystals Embedded in Asio2matrix

Pseudo nanocrystal silicon induced luminescence enhancement in a-Si /SiO2 multilayers

Composition, structure, and luminescent properties of SiOxNy(Si) composite layers containing Si nanocrystals

Photoluminescence and Structural Properties of Si Nanoparticles Embedded in Sio2 Matrix by Reactive Rf Magnetron Sputtering