Abstract:In this talk, identical epitaxial layer high speed electroabsorption (EA) modulator integrated light sources are studied systematically. Firstly, a 1.55 mu m 10 Gb/s distributed feedback (DFB) laser integrated EA modulated laser is presented, which adopts a partially gain-coupled DFB laser to improve single-mode yield. The typical measured small signal response indicates a 3 dB electrical bandwidth over 10 GHz. Secondly, a 1.55 mu m laterally coupled DFb laser is fabricated to eliminate the necessity of additional regrowth, in order to reduce the process complexity and fabrication cost. A stable single-mode operation has been demonstrated with a side mode suppression ratio over 45 dB at an injection level of 60 mA. Finally, an SOA integrated EA modulator with a planar ridge waveguide is fabricated for 40 Gb/s optical fiber communication systems. The device is chip-level packaged and tested on a coplanar waveguide based submount. The small signal frequency modulation responses of the integrated EA modulator are measured and simulated based on an equivalent circuit. The measured 3 dBe modulation bandwidth exceeds 40 GHz, and it is estimated to be over 45 GHz.

Low-threshold DFB-laser-integrated High-Speed EA Modulators Based on Ridge Waveguide Structure by ICP Etching

High-speed (10-40 Gb/s) Electroabsorption Modulator Integrated Devices for Fiber Communications

STUDY ON HIGH-SPEED DFB LASER/INTEGRATED EAMODULATORS BASED ON AN IDENTICALEPITAXIAL LAYER STRUCTURE

High-speed (>40 GHz) Integrated Electroabsorption Modulator Based on Identical Epitaxial Layer Approach

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High-speed AlGaInAs-MQW integrated EA modulator/DFB laser module based on identical epitaxial layer scheme for 40 Gb/s optic fiber communication systems

1.55 μm InGaAsP/InP partially gain-coupled DFB laser/electroabsorption modulator integrated device

Novel Planar Electrode Structure for High-Speed (>40 GHz) Electroabsorption Modulators

40 Gb/S Algainas Electroabsorption Modulated Laser Module Based on Identical Epitaxial Layer Scheme

40 GHz AlGaInAs Multiple-Quantum-Well Integrated Electroabsorption Modulator/Distributed Feedback Laser Based on Identical Epitaxial Layer Scheme

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Monolithically integrated device composed of MQW GaAlAs/GaAs gain-coupled DFB laser and electroabsorption modulator

Q-modulated Semiconductor Laser Using Deep Etched Subwavelength Trenches

Electro-absorption Modulated 53 Gbps Widely Tunable Laser Based on Half-Wave V-coupled Cavities

Grounded Coplanar Waveguide with Via Holes for High-speed Integrated EA Modulator/DFB Laser Module

A 10-Ghz Bandwidth Electroabsorption Modulated Laser by Ultra-Low-Pressure Selective Area Growth

Optimal Wavelength Detuning for Electroabsorption Modulator Integrated Distributed Feedback Lasers Based on Identical Epitaxial Layer Approach

Half-Wave-Coupled Ring-FP Laser with 50-Channel 100-Ghz-spaced Wavelength Tuning

A Wideband Electro-Optic Modulator Based on Long Range Surface Plasmon Resonances

1550 Nm InGaAsP/InP DFB+EA Integrated Light Source for Trunk Line Fiber Communication

Design and Improvement of InP-based Traveling Wave Mach-Zehnder Modulator for Monolithic Integrated with V-cavity Laser