Abstract:In this talk, identical epitaxial layer high speed electroabsorption (EA) modulator integrated light sources are studied systematically. Firstly, a 1.55 mu m 10 Gb/s distributed feedback (DFB) laser integrated EA modulated laser is presented, which adopts a partially gain-coupled DFB laser to improve single-mode yield. The typical measured small signal response indicates a 3 dB electrical bandwidth over 10 GHz. Secondly, a 1.55 mu m laterally coupled DFb laser is fabricated to eliminate the necessity of additional regrowth, in order to reduce the process complexity and fabrication cost. A stable single-mode operation has been demonstrated with a side mode suppression ratio over 45 dB at an injection level of 60 mA. Finally, an SOA integrated EA modulator with a planar ridge waveguide is fabricated for 40 Gb/s optical fiber communication systems. The device is chip-level packaged and tested on a coplanar waveguide based submount. The small signal frequency modulation responses of the integrated EA modulator are measured and simulated based on an equivalent circuit. The measured 3 dBe modulation bandwidth exceeds 40 GHz, and it is estimated to be over 45 GHz.

STUDY ON HIGH-SPEED DFB LASER/INTEGRATED EAMODULATORS BASED ON AN IDENTICALEPITAXIAL LAYER STRUCTURE

Optimal Wavelength Detuning for Electroabsorption Modulator Integrated Distributed Feedback Lasers Based on Identical Epitaxial Layer Approach

High-speed (10-40 Gb/s) Electroabsorption Modulator Integrated Devices for Fiber Communications

2.5 Gb/s Electroabsorption Modulator Integrated with Partially Gain-Coupled Distributed Feedback Laser Fabricated Using a Very Simple Device Structure

Low-threshold DFB-laser-integrated High-Speed EA Modulators Based on Ridge Waveguide Structure by ICP Etching

Experimental Study on the Modulation Nonlinearity of DFB Laser and DFB/EA Integrated Device

40 Gb/S Algainas Electroabsorption Modulated Laser Module Based on Identical Epitaxial Layer Scheme

High-speed (>40 GHz) Integrated Electroabsorption Modulator Based on Identical Epitaxial Layer Approach

40 GHz AlGaInAs Multiple-Quantum-Well Integrated Electroabsorption Modulator/Distributed Feedback Laser Based on Identical Epitaxial Layer Scheme

High-speed AlGaInAs-MQW integrated EA modulator/DFB laser module based on identical epitaxial layer scheme for 40 Gb/s optic fiber communication systems

1550 Nm InGaAsP/InP DFB+EA Integrated Light Source for Trunk Line Fiber Communication

InGaAsP Multiple-Quantum-Well Electroabsorption Modulator Integrated With V-Cavity Laser

40 Gb/s InGaAlAs EML Module Based on Identical Epitaxial Layer Integration Scheme

Electroabsorption Modulator Integrated Distributed Feedback Lasers for Trunk Line Fiber Communication

10Gb/s EML Module Based on Identical Epitaxial Layer Scheme

Monolithically integrated device composed of MQW GaAlAs/GaAs gain-coupled DFB laser and electroabsorption modulator

Optical and electrical properties of bandgap shifted 1.55-/spl mu/m laser diodes

Q-modulated Semiconductor Laser Using Deep Etched Subwavelength Trenches

Theoretical analysis of InGaAsP/InGaAsP multiple-quantum-wells electroabsorption modulators for the application of high-speed low driving voltage integrated light source

Fabrication and Packaging of 40-Gb/s AlGaInAs Multiple-Quantum-Well Electroabsorption Modulated Lasers Based on Identical Epitaxial Layer Scheme

Optimization Of Wavelength Detuning Of High Speed Electroabsorption Modulators For Better Transmission Capability