Abstract:Semiconductor laser is one of the most critical components in the field of modern communication. Research and development of single-mode semiconductor laser with high stability, high power, high beam quality and narrow line width is an important research area in this field. In this paper, A novel edge-emitting semiconductor laser diode structure is proposed. In the structure an active multimode interference waveguide structure serves as a main gain region. To modulate the longitudinal mode of the laser, a gain-coupled distributed feedback(DFB) laser based on high order surface gain coupled grating is introduced into the structure as well. The novel structure is then fabricated and compared with an conventional DFB laser. The experimental results show that higher slope efficiency and output power are achieved with the proposed structure than those with the conventional distributed feedback semiconductor lasers. The novel structure is also compared with conventional MMI laser with only Fabry-Parot(FP) cavity. The result shows that the proposed structure has higher beam quality and better stability than the FP cavity multimode interference waveguide lasers. To enhance the gain contrast in the quantum wells without introducing the effective index-coupled effect, the groove length and depth are well designed. Our device provides a single longitudinal mode with the maximum CW output power up to 53.8 mW/facet at 981.21 nm and 400 mA without facet coating, 3 dB linewidth < 13.6 pm, and SMSR > 32 dB. Optical bistable characteristic is observed with a threshold current difference. Meanwhile, by using high-order distribution feedback grating formed by shallow surface etching in the process of chip design and fabrication, the proposed structure of laser diode can realize regrowth freely and only micronscale precision i-line lithography is required. Such a structure with simple fabrication process and low manufacturing cost has great potential for commercial mass production.

Q-modulated Semiconductor Laser Using Deep Etched Subwavelength Trenches

Q-modulated Semiconductor Laser

Proposal for $Q$ -Modulated Semiconductor Laser

Novel high-speed low-chirp q-modulated semiconductor distributed feedback laser

InGaAsP/InP Based Q-modulated Slotted Fabry-Perot Laser Employing Lossy Half-Wave Trenches

Travelling wave analysis on high-speed performance of Q-modulated distributed feedback laser.

Rate Equation Analysis of High Speed Q-Modulated Semiconductor Laser

Monolithically Integrated Channel-selectable Wavelength Converter Based on XAM and Q-modulation Principle

Direct Modulation of Deep-Submicron Slotted Single Mode FP Laser

Wavelength switchable semiconductor laser using half-wave V-coupled cavities.

Monolithically integrated device composed of MQW GaAlAs/GaAs gain-coupled DFB laser and electroabsorption modulator

InGaAsP Multiple-Quantum-Well Electroabsorption Modulator Integrated With V-Cavity Laser

Design and Improvement of InP-based Traveling Wave Mach-Zehnder Modulator for Monolithic Integrated with V-cavity Laser

Tunable V-Coupled-Cavity Semiconductor Laser Monolithically Integrated with Monitoring Photodiodes Using Deeply Etched Reflective Trenches

Narrow Linewidth Single-Mode Slotted Fabry–Pérot Laser Using Deep Etched Trenches

InGaAs/InGaAsP Diffused Quantum Wells Optical Amplifiers and Modulators

40 GHz light source integrated with semiconductor laser and modulator based on AlGaInAs MQW material

Quantum Well Intermixing For The Realization Of Photonic Integrated Circuits

Photonic integrated circuits fabricated using quantum well intermixing

10Gb/s Direct Modulation of Widely Tunable V-Cavity-Laser with Chirp Managed Laser Technology

Design of a Multimode Interference Waveguide Semiconductor Laser Combining Gain Coupled Distributed Feedback Grating