1550 Nm InGaAsP/InP DFB+EA Integrated Light Source for Trunk Line Fiber Communication

Luo, Yi,Chang-Zheng Sun,Guo-Peng Wen,Tong-Ning Li

DOI: https://doi.org/10.1109/apcc.1999.820577

1999-01-01

Abstract:A butterfly packaged partially gain-coupled DFB laser/EA modulator module fabricated using identical epitaxial layer (IEL) structure is demonstrated.. The module is aimed to be suitable for the 2.5 Gb/s trunk line system.

What problem does this paper attempt to address?

High-speed (10-40 Gb/s) Electroabsorption Modulator Integrated Devices for Fiber Communications

Y Luo,B Xiong,J Wang,CZ Sun

DOI: https://doi.org/10.1117/12.636184

2005-01-01

Abstract:In this talk, identical epitaxial layer high speed electroabsorption (EA) modulator integrated light sources are studied systematically. Firstly, a 1.55 mu m 10 Gb/s distributed feedback (DFB) laser integrated EA modulated laser is presented, which adopts a partially gain-coupled DFB laser to improve single-mode yield. The typical measured small signal response indicates a 3 dB electrical bandwidth over 10 GHz. Secondly, a 1.55 mu m laterally coupled DFb laser is fabricated to eliminate the necessity of additional regrowth, in order to reduce the process complexity and fabrication cost. A stable single-mode operation has been demonstrated with a side mode suppression ratio over 45 dB at an injection level of 60 mA. Finally, an SOA integrated EA modulator with a planar ridge waveguide is fabricated for 40 Gb/s optical fiber communication systems. The device is chip-level packaged and tested on a coplanar waveguide based submount. The small signal frequency modulation responses of the integrated EA modulator are measured and simulated based on an equivalent circuit. The measured 3 dBe modulation bandwidth exceeds 40 GHz, and it is estimated to be over 45 GHz.
2.5Gb/s 1.55 μm InGaAsP/InP DFB laser/electroabsorption modulator integrated device

Yi Luo,Changzheng Sun,Guopeng Wen,Tongming Li,Xinmin Yang,Yousheng Wu,Renfan Wang,CaiLing Wang,Tao Huang,Jinyan Jin

1999-01-01

Abstract:Based on fabricating a 1.55 μm InGaAsP/InP partially-gain-coupled DFB laser/electroabsorption modulator monolithic integrated device using a very simple device structure, we improved the performance of the device and constructed a standard 14-pin butterfly packaged transmitter module. The threshold current of the module is around 20-30 mA, with over 40 dB side mode suppress ratio. The coupled output optical power is 2 mW, and the extinction ratio under 3V reverse bias is greater than 17 dB. 2.5 Gb/s transmission over 240 km of standard fiber is demonstrated, power penalty less than 0.5dB is obtained at BER=10-10.
40 Gb/S Algainas Electroabsorption Modulated Laser Module Based on Identical Epitaxial Layer Scheme

Peng-Fei Cai,Chang-Zheng Sun,Bing Xiong,Iian Wang,Ming-Jun Zhang,Jian-Ming Xu,Zhi-Zhi Liu,Jin Huang,Yi Luo

DOI: https://doi.org/10.1143/jjap.46.l664

2007-01-01

Abstract:A 40 Gb/s transmitter module containing an AlGaInAs electroabsorption (EA) modulator monolithically integrated with a distributed feedback (DFB) semiconductor laser has been fabricated using identical epitaxial layer (IEL) approach. Low loss coaxial-to-coplanar waveguide (CPW) transition is designed and fabricated for the module. By improving the quality of the anti-reflection (AR) coating on the EA modulator facet and optimizing the structure of the CPW transmission line, resonances in the frequency response of the module have been effectively suppressed. The module exhibits a small signal modulation bandwidth over 35 GHz, and clear eye opening has been demonstrated under 40 Gb/s nonreturn-to-zero (NRZ) code modulation.
High-speed AlGaInAs-MQW integrated EA modulator/DFB laser module based on identical epitaxial layer scheme for 40 Gb/s optic fiber communication systems

Luo, Yi,PengFei Cai,Sun, Changzheng,Bing Xiong

DOI: https://doi.org/10.1109/ICIPRM.2007.381200

2007-01-01

Abstract:AlGaInAs MQW-DFB laser is monolithically integrated with a lumped-electrode electroabsorption modulator based on an identical epitaxial layer integration scheme. A 3 dBe modulation bandwidth of module over 33 GHz has been demonstrated. © 2007 IEEE.
Integrated Dual-DFB Laser for 408 GHz Carrier Generation Enabling 131 Gbit/s Wireless Transmission over 10.7 Meters.

Shi Jia,Mu-Chieh Lo,Lu Zhang,Oskars Ozolins,Aleksejs Udalcovs,Deming Kong,Xiaodan Pang,Xianbin Yu,Shilin Xiao,Sergei Popov,Jiajia Chen,Guillermo Carpintero,Toshio Morioka,Hao Hu,Leif K. Oxenlowe

DOI: https://doi.org/10.1364/ofc.2019.th1c.2

2019-01-01

Abstract:A monolithically integrated dual-DFB laser generates a 408 GHz carrier used for demonstrating a record-high single-channel bit rate of 131 Gbit/s transmitted over 10.7 m. 16-QAM-OFDM modulation and specific nonlinear equalization techniques are employed.
2.5 Gb/s Electroabsorption Modulator Integrated with Partially Gain-Coupled Distributed Feedback Laser Fabricated Using a Very Simple Device Structure

Y Luo,Gp Wen,Cz Sun,Tn Li,Xm Yang,Ys Wu,Rf Wang,Cl Wang,T Huang,Jy Jin

DOI: https://doi.org/10.1143/jjap.38.l524

IF: 1.5

1999-01-01

Japanese Journal of Applied Physics

Abstract:An electroabsorption (EA) modulator integrated with a partially gain-coupled distributed feedback (DFB) semiconductor laser is fabricated using a very simple device structure. An identical epitaxtial layer is used for the active layer of the laser and the waveguide of the modulator to achieve wavelength compatibility between the two components. The fabricated device shows a low threshold current of 27 mA, a large extinction ratio of over 17 dB at -3 V, and a fiber coupled power of 2.7 mW. Packaged modules are also fabricated for 2.5 Gb/s operation. The power penalty at a 10-10 bit-error rate is less than 0.5 dB after transmission through 240 km of traditional fiber. The influence of lasing wavelength detuning on device performance is also discussed based on our experimental data.
Electroabsorption Modulator Integrated Distributed Feedback Lasers for Trunk Line Fiber Communication

CZ Sun,GP Wen,B Xiong,Y Luo,TN Li,Y Nakano

DOI: https://doi.org/10.1117/12.408403

2000-01-01

Abstract:Electroabsorption modulator integrated distributed feedback lasers have been fabricated using identical epitaxial layer approach. The influence of wavelength detuning on device characteristics is investigated to achieve optimum device performance. Gain coupling is introduced into the device to improve single mode yield and wavelength stability. Integrated light source modules have also been fabricated for 2.5 Gb/s trunk line applications.
200 Gb/s Optical-Amplifier-Free IM/DD Transmissions Using a Directly Modulated O-Band DFB+R Laser Targeting LR Applications

Xiaodan Pang,Toms Salgals,Hadrien Louchet,Di Che,Markus Gruen,Yasuhiro Matsui,Thomas Dippon,Richard Schatz,Mahdieh Joharifar,Benjamin Kruger,Fabio Pittala,Yuchuan Fan,Aleksejs Udalcovs,Lu Zhang,Xianbin Yu,Sandis Spolitis,Vjaceslavs Bobrovs,Sergei Popov,Oskars Ozolins

DOI: https://doi.org/10.1109/jlt.2023.3261421

IF: 4.7

2023-01-01

Journal of Lightwave Technology

Abstract:We experimentally demonstrate an O-band single-lane 200 Gb/s intensity modulation direct detection (IM/DD) transmission system using a low-chirp, broadband, and high-power directly modulated laser (DML). The employed laser is an isolator-free packaged module with over 65-GHz modulation bandwidth enabled by a distributed feedback plus passive waveguide reflection (DFB+R) design. We transmit high baud rate signals over 20-km standard single-mode fiber (SSMF) without using any optical amplifiers and demodulate them with reasonably low-complexity digital equalizers. We generate and detect up to 170 Gbaud non-return-to-zero on-off-keying (NRZ-OOK), 112 Gbaud 4-level pulse amplitude modulation (PAM4), and 100 Gbaud PAM6 in the optical back-to-back configuration. After transmission over the 20-km optical-amplifier-free SSMF link, up to 150 Gbaud NRZ-OOK, 106 Gbaud PAM4, and 80 Gbaud PAM6 signals are successfully received and demodulated, achieving bit error rate (BER) performance below the 6.25%-overhead hard-decision (HD) forward-error-correction code (FEC) limit. The demonstrated results show the possibility of meeting the strict requirements towards the development of 200 Gb/s/lane IM/DD technologies, targeting 800 Gb/s and 1.6 Tb/s LR applications.
40 Gb/s InGaAlAs EML Module Based on Identical Epitaxial Layer Integration Scheme

Changzheng Sun,Bing Xiong,Jian Wang,Pengfei Cai,Jianming Xu,Qiwei Zhou,He Yuan,Yi Luo

DOI: https://doi.org/10.1117/12.807172

2008-01-01

Abstract:High-speed AlGaInAs multiple-quantum-well (MQW) electroabsorption modulated lasers (EMLs) based on identical epitaxial layer (IEL) integration scheme are developed for 40 Gb/s optical fiber communication systems. The electroabsorption modulator (EAM) section adopts a narrow high-mesa waveguide formed by inductively coupled plasma (ICP) dry etching technique, and a self-aligned planarization technique is employed to further reduce the device capacitance. Resonances are observed in the small signal modulation response of the packaged EML module, which are attributed to parallel-plate modes of the coplanar waveguide (CPW) transmission line used for modulation signal feeding and the residual reflection at the modulator facet, respectively. The influence of such resonances on the large signal eyediagram performance of the device is studied, and methods for their suppression are presented. Clear eye opening under 40 Gb/s non-return-to-zero (NRZ) modulation has been demonstrated for the optimized EML module.
10Gb/s EML Module Based on Identical Epitaxial Layer Scheme

Changzheng Sun,Bing Xiong,Jian Wang,Pengfei Cai,Jianbo Tian,Yi Luo,Yu Liu,Liang XIE,JIABAO ZHANG,Ninghua ZHU

DOI: https://doi.org/10.3321/j.issn:0253-4177.2005.04.006

2005-01-01

Abstract:A 10Gb/s transmitter module containing an electroabsorption modulator monolithically integrated with a distributed feedback (DFB) semiconductor laser is fabricated using the identical epitaxial layer scheme. Gain-coupling mechanism is employed to improve the single mode yield of the DFB laser, while inductively coupled plasma dry etching technique is utilized to reduce the modulator capacitance. The integrated device exhibits a threshold current as low as 12mA and an extinction ratio over 15dB at -2V bias. The small signal modulation bandwidth is measured to be over 10GHz. The transmission experiment at 10Gb/s indicates a power penalty less than 1dB at a bit-error-rate of 10-12 after transmission through 35km single mode fiber.
1.55 Mu M Ingaasp/Inp Partially Gain-Coupled Distributed Feedback Laser Electroabsorption Modulator Integrated Device For Trunk Line Communication

yi luo,guopeng wen,changzheng sun,tongning li,xinmin yang,renfan wang,cailin wang,jinyan jin

DOI: https://doi.org/10.1117/12.319593

1998-01-01

Abstract:In this paper, a 1.55 mu m InGaAsP/InP partially gain-coupled DFB laser monolithically integrated with electroabsorption modulator is fabricated for the first time. The threshold current and the extiction ratio are 40 mA and 11 dB respectively.
InGaAsP Multiple-Quantum-Well Electroabsorption Modulator Integrated With V-Cavity Laser

lin wu,jianjun he,ming chen,danfeng fan

DOI: https://doi.org/10.1364/oedi.2014.oth4c.7

2014-01-01

Abstract:A monolithically integrated transmitter containing an InGaAsP electroabsorption modulator (EAM) and a V-cavity laser is proposed. The simulated E/O response shows a -3dB bandwidth over 16 GHz and the capacitance of EAM is reduced to 0.17 pF.
1.55 μm InGaAsP/InP partially gain-coupled DFB laser/electroabsorption modulator integrated device

Yi Luo,Guopeng Wen,Changzheng Sun,Tongning Li,Xinmin Yang,Renfan Wang,CaiLing Wang,Jinyan Jin

1998-01-01

Abstract:A simple structure for 1.55 μm InGaAsP/InP partially Gain-Coupled DFB Laser/Electro-absorption Modulator monolithic integrated device for the first time. Ridge waveguide is adopted for transverse mode confinement. The threshold current of the devices is distributed over a range of 30-60 mA, typical side mode suppress ratio is 40 dB and on-off ratio is 11 dB.
InP-based optoelectronic devices for optical fiber communications

Yi Luo,Liang-Hui Chen,Tong-Ning Li

DOI: https://doi.org/10.1023/A:1021280822112

1999-01-01

Czechoslovak Journal of Physics

Abstract:In this contribution we report the research and development of 1.55 µm InGaAsP/InP gain-coupled DFB laser with an improved injection-carrier induced grating and of high performance 1.3 µm and 1.55 µm InGaAsP/InP FP and DFB lasers for communications. Long wavelength strained MQW laser diodes with a very low threshold current (7–10 mA) have been fabricated. Low pressure MOVPE technology has been employed for the preparation of the layered structure. A novel gain-coupled DFB laser structure with an improved injection-carrier modulated grating has been proposed and fabricated. The laser structures have been prepared by hybrid growth of MOVPE and LPE techniques and reasonably good characteristics have been achieved for resultant lasers. High performance 1.3 µm and 1.55 µm InGaAsP/InP DFB lasers have successfully been developed for CATV and trunk line optical fiber communication.
Fabrication and Packaging of 40-Gb/s AlGaInAs Multiple-Quantum-Well Electroabsorption Modulated Lasers Based on Identical Epitaxial Layer Scheme

Sun, Changzheng,Bing Xiong,Jian Wang,Pengfei Cai,Jianming Xu,Jin Huang,He Yuan,Qiwei Zhou,Yi Luo

DOI: https://doi.org/10.1109/JLT.2008.922164

2008-01-01

Abstract:High-speed AlGaInAs multiple-quantum-well (MQW) electroabsorption modulated lasers (EMLs) based on an identical epitaxial layer (IEL) integration scheme are developed for 40-Gb/s optical fiber communication systems. A self-aligned planarization technique has been adopted to reduce the capacitance of the electroabsorption modulator (EAM). The IEL structure EML chips exhibit a small signal modulation bandwidth around 40 GHz. The influence of residual reflection at the modulator facet on the small signal modulation response is investigated. Submount containing a grounded coplanar waveguide (GCPW) transmission line is used for packaging the EML chips into transmitter modules. The optimization of the GCPW structure to suppress resonances in frequency response due to parallel-plate modes is presented. Clear eye opening under 40-Gb/s nonreturn-to-zero (NRZ) modulation has been demonstrated for the packaged EML module.
STUDY ON HIGH-SPEED DFB LASER/INTEGRATED EAMODULATORS BASED ON AN IDENTICALEPITAXIAL LAYER STRUCTURE

熊兵,王健,孙长征,罗毅

DOI: https://doi.org/10.3321/j.issn:1001-9014.2002.z1.005

2002-01-01

JOURNAL OF INFRARED AND MILLIMETER WAVES

Abstract:A theoretical analysis of the mechanism of wavelength compatibility in an electroabsorption (EA) modulator integrated distributed feedback (DFB) lasers was made based on identical-epitaxial-layer (IEL) integration scheme. It was shown that, as a result of carrier-induced bandgap shrinkage and temperature rise in the active region, the gain profile of quantum well material will shift towards the longer wavelength side of the excitonic absorption peak, making it possible to achieve wavelength compatibility in an IEL structure. Based on these results, IEL integrated sources were designed and fabricated. These devices have shown excellent static characteristics as well as desirable high-speed modulation performances, with a small signal modulation bandwidth of about 8 GHz.
40 Gb/s AlGaInAs Electroabsorption Modulated Laser Module with Novel Packaging Design

Changzheng Sun,Bing Xiong,Jianming Xu,He Yuan,Yi Luo

DOI: https://doi.org/10.1109/islc.2010.5642721

2010-01-01

Abstract:A 40 Gb/s AlGaInAs electroabsorption modulated laser (EML) module with optimized performance is reported. A novel modulation signal feeding line is adopted for module packaging, and dynamic extinction ratio over 8.2 dB is demonstrated at 43 Gb/s modulation.
InGaAsP/InP Based Q-modulated Slotted Fabry-Perot Laser Employing Lossy Half-Wave Trenches

Wei Wang,Yimin Xia,Zhipeng Hu,Jian-Jun He

DOI: https://doi.org/10.1117/12.2504700

2018-01-01

Abstract:A 3-section deep etched Q-modulated slotted Fabry-Perot laser (QMSFP) composed of a modulator, a gain section and a filter is designed and simulated with transfer matrix method and traveling wave method and finally experimentally demonstrated in this paper. This QMSFP has been fabricated in 1550 nm InGaAsP/InP-MQW wafer with Quantum Well Intermixing (QWI) technology. The static measurement results show that an extinction ratio (ER) of 13.6 dB can be achieved with the modulator length of 66.4 mu m and the reverse bias of 0 V and 6.5 V at specific injection current in the gain section and filter section. The lasing threshold current difference between ON and OFF states can approach 10 mA under fixed current of the filter section. The Side Mode Suppression Ratio (SMSR) of the ON state is > 34 dB with the measured output power from the front face > 149 mu W. There is no mode-hop between ON and OFF state. The dynamic simulation results under high speed modulation will also be presented.
High Speed Semiconductor Light Sources Based on Direct Modulation and External Modulation

罗毅,徐建明,黄缙,孙长征,熊兵,蔡鹏飞

DOI: https://doi.org/10.3969/j.issn.1007-2276.2008.02.003

2008-01-01

Abstract:Directly and externally modulated semiconductor lasers are key components in modern fiber communication systems.Firstly,the structure and fabrication process of a directly modulated AlGaInAs multiple quantum well DFB laser diode for 10 Gb/s access network were presented.AlGaInAs quantum wells had large conduction band offset,which led to improved temperature performance.A characteristic temperature as high as 88 K had been demonstrated for the AlGaInAs semiconductor laser diodes.In addition,the 3 dB small signal modulation bandwidth of the device was over 15 GHz.Secondly,a high-speed EA modulator integrated DFB laser diode for 40 Gb/s trunkline communication system was described.The device was based on identical epitaxial layer integration scheme and was mounted on an Al2O3-based microwave submount.The extinction ratio of the integrated device was larger than 13 dB at a bias of-3 V and its 3 dB bandwidth was measured to be over 40 GHz.

1550 Nm InGaAsP/InP DFB+EA Integrated Light Source for Trunk Line Fiber Communication

High-speed (10-40 Gb/s) Electroabsorption Modulator Integrated Devices for Fiber Communications

2.5Gb/s 1.55 μm InGaAsP/InP DFB laser/electroabsorption modulator integrated device

40 Gb/S Algainas Electroabsorption Modulated Laser Module Based on Identical Epitaxial Layer Scheme

High-speed AlGaInAs-MQW integrated EA modulator/DFB laser module based on identical epitaxial layer scheme for 40 Gb/s optic fiber communication systems

Integrated Dual-DFB Laser for 408 GHz Carrier Generation Enabling 131 Gbit/s Wireless Transmission over 10.7 Meters.

2.5 Gb/s Electroabsorption Modulator Integrated with Partially Gain-Coupled Distributed Feedback Laser Fabricated Using a Very Simple Device Structure

Electroabsorption Modulator Integrated Distributed Feedback Lasers for Trunk Line Fiber Communication

200 Gb/s Optical-Amplifier-Free IM/DD Transmissions Using a Directly Modulated O-Band DFB+R Laser Targeting LR Applications

40 Gb/s InGaAlAs EML Module Based on Identical Epitaxial Layer Integration Scheme

10Gb/s EML Module Based on Identical Epitaxial Layer Scheme

1.55 Mu M Ingaasp/Inp Partially Gain-Coupled Distributed Feedback Laser Electroabsorption Modulator Integrated Device For Trunk Line Communication

InGaAsP Multiple-Quantum-Well Electroabsorption Modulator Integrated With V-Cavity Laser

1.55 μm InGaAsP/InP partially gain-coupled DFB laser/electroabsorption modulator integrated device

InP-based optoelectronic devices for optical fiber communications

Fabrication and Packaging of 40-Gb/s AlGaInAs Multiple-Quantum-Well Electroabsorption Modulated Lasers Based on Identical Epitaxial Layer Scheme

STUDY ON HIGH-SPEED DFB LASER/INTEGRATED EAMODULATORS BASED ON AN IDENTICALEPITAXIAL LAYER STRUCTURE

40 Gb/s AlGaInAs Electroabsorption Modulated Laser Module with Novel Packaging Design

InGaAsP/InP Based Q-modulated Slotted Fabry-Perot Laser Employing Lossy Half-Wave Trenches

High Speed Semiconductor Light Sources Based on Direct Modulation and External Modulation