2.5Gb/s 1.55 μm InGaAsP/InP DFB laser/electroabsorption modulator integrated device

Yi Luo,Changzheng Sun,Guopeng Wen,Tongming Li,Xinmin Yang,Yousheng Wu,Renfan Wang,CaiLing Wang,Tao Huang,Jinyan Jin
1999-01-01
Abstract:Based on fabricating a 1.55 μm InGaAsP/InP partially-gain-coupled DFB laser/electroabsorption modulator monolithic integrated device using a very simple device structure, we improved the performance of the device and constructed a standard 14-pin butterfly packaged transmitter module. The threshold current of the module is around 20-30 mA, with over 40 dB side mode suppress ratio. The coupled output optical power is 2 mW, and the extinction ratio under 3V reverse bias is greater than 17 dB. 2.5 Gb/s transmission over 240 km of standard fiber is demonstrated, power penalty less than 0.5dB is obtained at BER=10-10.
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