Abstract:In this talk, identical epitaxial layer high speed electroabsorption (EA) modulator integrated light sources are studied systematically. Firstly, a 1.55 mu m 10 Gb/s distributed feedback (DFB) laser integrated EA modulated laser is presented, which adopts a partially gain-coupled DFB laser to improve single-mode yield. The typical measured small signal response indicates a 3 dB electrical bandwidth over 10 GHz. Secondly, a 1.55 mu m laterally coupled DFb laser is fabricated to eliminate the necessity of additional regrowth, in order to reduce the process complexity and fabrication cost. A stable single-mode operation has been demonstrated with a side mode suppression ratio over 45 dB at an injection level of 60 mA. Finally, an SOA integrated EA modulator with a planar ridge waveguide is fabricated for 40 Gb/s optical fiber communication systems. The device is chip-level packaged and tested on a coplanar waveguide based submount. The small signal frequency modulation responses of the integrated EA modulator are measured and simulated based on an equivalent circuit. The measured 3 dBe modulation bandwidth exceeds 40 GHz, and it is estimated to be over 45 GHz.

1.55 Mu M Ingaasp/Inp Partially Gain-Coupled Distributed Feedback Laser Electroabsorption Modulator Integrated Device For Trunk Line Communication

1.55 μm InGaAsP/InP partially gain-coupled DFB laser/electroabsorption modulator integrated device

Electroabsorption Modulator Integrated Distributed Feedback Lasers for Trunk Line Fiber Communication

2.5Gb/s 1.55 μm InGaAsP/InP DFB laser/electroabsorption modulator integrated device

2.5 Gb/s Electroabsorption Modulator Integrated with Partially Gain-Coupled Distributed Feedback Laser Fabricated Using a Very Simple Device Structure

InGaAsP Multiple-Quantum-Well Electroabsorption Modulator Integrated With V-Cavity Laser

Monolithically integrated device composed of MQW GaAlAs/GaAs gain-coupled DFB laser and electroabsorption modulator

InGaAsP/InP Based Q-modulated Slotted Fabry-Perot Laser Employing Lossy Half-Wave Trenches

1550 Nm InGaAsP/InP DFB+EA Integrated Light Source for Trunk Line Fiber Communication

1.55-/Spl Mu/m AlGaInAs-InP Laterally Coupled Distributed Feedback Laser

40 GHz AlGaInAs Multiple-Quantum-Well Integrated Electroabsorption Modulator/Distributed Feedback Laser Based on Identical Epitaxial Layer Scheme

Distributed feedback semiconductor lasers and their application in photonic integrated devices

40 Gb/S Algainas Electroabsorption Modulated Laser Module Based on Identical Epitaxial Layer Scheme

Integrated Module Of A Dfb Laser And Linbo3 Modulator

Monolithic Integration of Tunable V-coupled-cavity Laser and Mach-Zehnder Modulator on Generic InP Platform

Q-modulated Semiconductor Laser Using Deep Etched Subwavelength Trenches

40 GHz light source integrated with semiconductor laser and modulator based on AlGaInAs MQW material

High-speed (10-40 Gb/s) Electroabsorption Modulator Integrated Devices for Fiber Communications

Fast Frequency Tuning Characteristics of a FM Laser Based on the Integrated MQW DFB Laser/ea Modulator Device

Tunable V-Coupled-Cavity Semiconductor Laser Monolithically Integrated with Monitoring Photodiodes Using Deeply Etched Reflective Trenches

Phase-matched Combined Distributed-Feedback/fabry-pérot Structure for Semiconductor Lasers