Abstract:A technique, based on quantum well (QW) intermixing, has been developed for the post growth, spatially selective tuning of the QW bandgap in a semiconductor laser structure. High energy (MeV) ion implantation is used to create a large number of vacancies and interstitials in the device. During high temperature processing (rapid thermal annealing), these defects enhance the intermixing of the QW and the barrier materials while being annealed out, producing a blue shift of the QW bandgap. Increases in bandgap energy of greater than 100 nm at 1.55 mu m in InGaAs/lnGaAsP/InP structures can be achieved. Absorption spectroscopy in the waveguide geometry is used to quantify the losses in the structure. Using a simple masking scheme to spatially modify the defect concentration, different regions of a wafer can be blue shifted by different amounts. This allows the integration of many different devices such as lasers, detectors, modulators, amplifiers and waveguides on a single wafer using only a single, postgrowth processing step. The performance of both passive (waveguide) and active (laser and amplifier) devices produced using this technique will be described, as well as the practicality of this technique in the production of photonic integrated circuits.

Fast Frequency Tuning Characteristics of a FM Laser Based on the Integrated MQW DFB Laser/ea Modulator Device

Mode Selection in InGaAs/InGaAsP Quantum Well Photonic Crystal Lasers Based on Coupled Double-Heterostructure Cavities.

InGaAsP/InP Based Q-modulated Slotted Fabry-Perot Laser Employing Lossy Half-Wave Trenches

Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 Μm

40 GHz light source integrated with semiconductor laser and modulator based on AlGaInAs MQW material

InGaAsP Multiple-Quantum-Well Electroabsorption Modulator Integrated With V-Cavity Laser

Quantum Dot Lasers: Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 Μm (laser Photonics Rev. 14(3)/2020)

GaAs/AlGaAs tunable laser using Fabry-Perot filters based on half-wave coupled lossy deep etched trenches

Q-modulated Semiconductor Laser Using Deep Etched Subwavelength Trenches

Double Half-Wave-Coupled Rectangular Ring-Fp Semiconductor Laser With 19-Nm Quasi-Continuous Tuning Range

Half-Wave-Coupled Ring-FP Laser with 50-Channel 100-Ghz-spaced Wavelength Tuning

InGaAs/InGaAsP Diffused Quantum Wells Optical Amplifiers and Modulators

Double Half-Wave-Coupled Rectangular Ring-Fp Laser With 35x100ghz Wavelength Tuning

50×100GHz wavelength tuning in rectangular ring-FP semiconductor laser

IaAsP/InGaAsP quantum-well 1.3 μm vertical-cavity surface-emitting lasers

Epitaxy and Physical Properties of 1.31μm Vertical Cavity Surface-Emitting Lasers

1.55μm InGaAsP/InP strained MQN-coupled DFB laser with an improved injection-carrier grating

High-speed AlGaInAs-MQW integrated EA modulator/DFB laser module based on identical epitaxial layer scheme for 40 Gb/s optic fiber communication systems

40 GHz AlGaInAs Multiple-Quantum-Well Integrated Electroabsorption Modulator/Distributed Feedback Laser Based on Identical Epitaxial Layer Scheme

Photonic integrated circuits fabricated using quantum well intermixing

High-speed direct modulated 1.5 μm uncooled AlGalnAs-InP MQW-DFB lasers