Double Half-Wave-Coupled Rectangular Ring-Fp Semiconductor Laser With 19-Nm Quasi-Continuous Tuning Range

Mengtian Sun,Lin Wu,Xiaohai Xiong,Xiaolu Liao,Jian-Jun He

DOI: https://doi.org/10.1364/cleo_si.2015.sf1i.5

2015-01-01

Abstract:We present our latest experimental results of the double half-wave-coupled rectangular ring-FP laser in a XMD TOSA package. A 19-nm quasi-continuous tuning range with over 30dB side mode suppression ratio is obtained.

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Double Half-Wave-Coupled Rectangular Ring-Fp Laser With 35x100ghz Wavelength Tuning

Lin Wu,Xiaolu Liao,Zhipeng Hu,Jian-Jun He

DOI: https://doi.org/10.1109/LPT.2015.2406709

IF: 2.6

2015-01-01

IEEE Photonics Technology Letters

Abstract:A widely wavelength tunable semiconductor laser based on two cascaded half-wave-coupled rectangular ring resonators is demonstrated. Vernier effect between two rectangular rings with perimeter of 281 and 305 mu m is employed to enlarge the tuning range. Simple fabrication process is used with all active waveguides. No epitaxial regrowth, grating, or high-resolution lithography is needed. By adjusting the injection currents applied to the cascaded rectangular rings synchronously, wavelength tuning of 35 channels with 100 GHz spacing is achieved with side mode suppression ratio up to 40.5 dB.
Double Half-Wave-Coupled Rectangular Ring-FP Laser With $35\times 100$ GHz Wavelength Tuning

Lin Wu,Xiaolu Liao,Zhipeng Hu,Jian-Jun He

DOI: https://doi.org/10.1109/LPT.2015.2406709

IF: 2.6

2015-01-01

IEEE Photonics Technology Letters

Abstract:A widely wavelength tunable semiconductor laser based on two cascaded half-wave-coupled rectangular ring resonators is demonstrated. Vernier effect between two rectangular rings with perimeter of 281 and 305 μm is employed to enlarge the tuning range. Simple fabrication process is used with all active waveguides. No epitaxial regrowth, grating, or high-resolution lithography is needed. By adjustin...
Half-Wave-Coupled Ring-FP Laser with 50-Channel 100-Ghz-spaced Wavelength Tuning

Lin Wu,Zhipeng Hu,Xiaolu Liao,Jian-Jun He

DOI: https://doi.org/10.1109/jphot.2014.2345876

IF: 2.4

2014-01-01

IEEE Photonics Journal

Abstract:We report our latest experimental results of the half-wave-coupled rectangular ring-FP laser. All the waveguides of the device are active, and the thermooptic effect is employed to extend the tuning range beyond the free-spectral-range limit. Singleelectrode tuning of 20 channels with 100-GHz spacing is obtained. By combining five single-electrode-controlled tuning curves with different bias currents on fixed electrodes and with the thermoelectric cooler fixed at 20 °C, wavelength tuning of 50 channels with 100-GHz spacing covering the L-band is achieved with a side-mode suppression ratio up to 41 dB. Direct modulation at 2.5 Gb/s is also demonstrated. The simple and compact ring-FP laser has great potential as a low-cost tunable laser for many applications.
Single-electrode-controlled 14×200ghz Digitally Wavelength Switchable Half-Wave Coupled Rectangular Ring-Fp Semiconductor Laser

Lin Wu,Jianjun Meng,Jian-Jun He

DOI: https://doi.org/10.1364/acpc.2012.ath2b.7

2012-01-01

Abstract:We report our latest experimental results of the half-wave coupled rectangular ring-FP laser. Single-electrode-controlled wavelength switching over 14 channels with 200GHz spacing is demonstrated with side-mode-suppression-ratio (SMSR) up to 37dB. And the total device size is only 0.5×0.4 mm2.
50×100GHz wavelength tuning in rectangular ring-FP semiconductor laser

Lin Wu,Zhipeng Hu,Jian-Jun He

DOI: https://doi.org/10.1364/cleo_si.2014.sth1g.1

2014-01-01

Abstract:We report our latest experimental results of the half-wave coupled rectangular ring-FP laser. Wavelength tuning of 50 channels covering L band at 100GHz spacing is achieved, with SMSR up to 41dB. Direct modulation at 2.5Gbps is also demonstrated.
Widely Tunable Semiconductor Laser Based on Double Half-Wave-Coupled Rectangular Ring Resonators

Lin Wu,Zhipeng Hu,Jian-Jun Meng,Jian-Jun He

DOI: https://doi.org/10.1364/acpc.2013.af1b.2

2013-01-01

Abstract:A widely tunable semiconductor laser based on double half-wave-coupled rectangular ring resonators is designed and simulated. By employing the Vernier effect between the rectangular ring resonators, a large tuning range of 40nm is achieved, while the corresponding threshold gain difference and the SMSR is 4.5cm−1 and 46dB, respectively.
Mode Selection in InGaAs/InGaAsP Quantum Well Photonic Crystal Lasers Based on Coupled Double-Heterostructure Cavities.

Ling-Fang Wang,Xiao-Tian Cheng,Xiao-Dong Zhang,Jia-Wang Yu,Jun-Yong Yan,Zhi-Bo Ni,Tao Wang,Ming-Jun Xia,Xing Lin,Feng Liu,Chao-Yuan Jin

DOI: https://doi.org/10.1364/oe.447759

IF: 3.8

2022-01-01

Optics Express

Abstract:Photonic crystal lasers with a high-Q factor and small mode volume are ideal light sources for on-chip nano-photonic integration. Due to the submicron size of their active region, it is usually difficult to achieve high output power and single-mode lasing at the same time. In this work, we demonstrate well-selected single-mode lasing in a line-defect photonic crystal cavity by coupling it to the high-Q modes of a short double-heterostructure photonic crystal cavity. One of the FP-like modes of the line-defect cavity can be selected to lase by thermo-optically tuning the high-Q mode of the short cavity into resonance. Six FP-like modes are successively tuned into lasing with side mode suppression ratios all exceeding 15 dB. Furthermore, we show a continuous wavelength tunability of about 10 nm from all the selected modes. The coupled cavity system provides a remarkable platform to explore the rich laser physics through the spatial modulation of vacuum electromagnetic field at submicron scale.
40Nm Quasi-Continuous Wavelength Tuning of V-cavity Semiconductor Laser

Tize Li,Jianjun Meng,Jian-Jun He

DOI: https://doi.org/10.1088/1742-6596/844/1/012013

2017-01-01

Abstract:Full band quasi-continuous wavelength tuning with similar to 36dB side mode suppression ratio of V-cavity semiconductor laser is reported. A simple and general tuning algorithm employing only two electrodes to control the frequency combs shifting synchronously is presented and demonstrated, respectively.
Simple and Compact Tunable Semiconductor Lasers Based on Novel Half-Wave Coupler

Jian-Jun He,Xiaohai Xiong,Jianjun Meng,Lin Wu,Sen Zhang,Xiaolu Liao,Li Zou

DOI: https://doi.org/10.1117/12.2085701

2015-01-01

Abstract:Widely tunable semiconductor lasers based on a novel half-wave coupler are presented. They have been implemented in the form of half-wave coupled V-cavity and ring-FP cavities. By using the novel half-wave coupler, single-mode lasing with high side-mode-suppression-ratio is achieved. Single-electrode controlled wide-band wavelength tuning with Vernier effect is demonstrated. The full-band tuning of 50 channels with 100GHz spacing is realized by further employing temperature induced gain spectrum shift. The laser is packaged into a small-form-factor 9-pin box TOSA, and the electronic driver has been developed for the wavelength tuning and direct modulation. The advantages of compactness, fabrication simplicity, easy wavelength control and direct modulation allow the tunable lasers to be used in low-cost access and datacenter networks, as well as in portable devices for spectroscopic analysis.
Experimental demonstration of a widely tunable two-section DFB laser

Yin Wang,Mingxin Li,Jianjun He

DOI: https://doi.org/10.1117/12.870592

2010-01-01

Abstract:We report our experimental results on a two-section DFB laser with a wide tuning range of over 10nm. The device consists of two individually injected gain-coupled DFB sections with a uniform grating pitch. The total device length is only 350um, with 150um for one section and 200um for the other. The threshold current is about 24mA total for the two electrodes. The lasing mode lies on the longer wavelength side of the stop band. In the tuning process, we adjust only one injected current monotonically until the other DFB mode at the shorter wavelength side of the stop band is about to be excited. Then we alter to the other electrode and repeat the process. We found that the shorter wavelength DFB mode can be suppressed efficiently through this method and a mode-hop-free tuning range as large as 11 nm can be obtained. The side mode suppression ratio (SMSR) in optimal conditions is maintained above 45 dB when the wavelength is tuned from 1541nm to 1550nm, while the output power variation is less than 3 dB. To our knowledge, this is the largest tuning range achieved for a two-section DFB laser with a simple uniform grating tuned only by injection current. The device is suitable for applications in DWDM systems as well as laser spectroscopy and lidar sensing.
Tunable Coupled-Cavity Semiconductor Laser Based on a Half-Wave Bow-Tie Coupler

Jia Guo,Yimin Xia,Xiaolu Liao,Jian-Jun He

DOI: https://doi.org/10.1364/ol.44.003526

IF: 3.6

2019-01-01

Optics Letters

Abstract:We propose and experimentally demonstrate a widely tunable coupled-cavity semiconductor laser based on a novel half-wave bow-tie coupler. The laser comprises two resonate cavities connected through the bow-tie coupler consisting of two back-to-back corner reflectors connected with a short waveguide, which produces a half-wave cross-coupling phase with an optimum coupling coefficient for achieving high mode selectivity. No complex grating or multiple epitaxial growth is needed. By tuning a single electrode at a fixed temperature, 29.6 nm wavelength tuning covering 38 channels with 100 GHz frequency spacing is achieved experimentally, with a side-mode suppression ratio of over 35 dB.
Wavelength Switchable Semiconductor Laser Based on Half-Wave Coupled Fabry–Pérot and Rectangular Ring Resonators

Lin Wu,Yin Wang,Tingting Yu,Lei Wang,Jian-Jun He

DOI: https://doi.org/10.1109/lpt.2012.2191950

IF: 2.6

2012-01-01

IEEE Photonics Technology Letters

Abstract:A wavelength switchable semiconductor laser based on half-wave coupled Fabry-Perot and rectangular ring resonators is proposed and demonstrated. The device consists of all-active waveguides to facilitate the fabrication. The cavity lengths are designed with a small difference to employ the Vernier effect to obtain large wavelength tuning. A half-wave coupler is used to produce a phase-dependent loss, thus achieving a high side-mode suppression ratio (SMSR). By adjusting the current applied to just one electrode, six-channels wavelength switching with 200-GHz spacing is measured by the carrier injection effect, with a current variation of only about 20 mA. At higher current injection level, the thermal-optic effect becomes dominant, which produced eight-channels wavelength switching in the opposite direction with a maximal SMSR of 38.5 dB.
Tunable Single-Mode Half-Wave Coupled Laser Using Two Back-to-Back Corner-Connected TIR Reflectors

Jia Guo,Xiaolu Liao,Jian-Jun He

DOI: https://doi.org/10.1364/cleopr.2018.w1j.5

2018-01-01

Abstract:We report the design concept and experimental results of a tunable half-wave coupled-cavity laser using two back-to-back corner-connected total internal reflection reflectors. A wide tuning range of 26.4nm is achieved with 40dB SMSR.
Tunable V-Cavity Semiconductor Laser And Modules

Jian-Jun He,Xiaohai Xiong,Jianjun Meng,Sen Zhang,Xiaolu Liao,Hongli Zhu,Lin Wu,Li Zou,Lei Wang,Guoping Li

2014-01-01

Abstract:We present the principle, design, packaging and measurement results of widely tunable V-cavity lasers. By using a novel half-wave coupler, single-mode lasing with high side mode-suppression-ratio is achieved. Single-electrode controlled wide-band wavelength tuning with Vernier effect is realized. The full-band tuning of 50 channels with 100 GHz spacing is demonstrated by further employing temperature induced gain spectrum shift. The laser is packaged into a small-form-factor 9-pin TOSA, and the electronic driver has been developed for the wavelength tuning and direct modulation. The advantages of compactness, fabrication simplicity, and easy wavelength control offer great potential for the tunable laser to be used in low-cost access and data center networks, as well as in portable devices for spectroscopic analysis.
Quasi-Continuous Wavelength Tuning of Single-mode Interband Cascade Lasers Based on V-coupled Cavity

Jingli Gong,Hanting Yang,Rui Q. Yang,Jian-Jun He

DOI: https://doi.org/10.1117/12.2575270

2020-01-01

Abstract:Mid-infrared semiconductor lasers have a wide range of applications in gas sensing, environmental monitoring, medical diagnosis and other fields. The V-coupled cavity laser (VCCL) approach has been successfully applied in the communication band to achieve single-mode operation with a wide tuning range because of its advantages of no grating, compact structure and simple wavelength control. In this paper, the concept of V-coupled cavity is introduced to the interband cascaded lasers, and a monolithically integrated mid-infrared widely tunable single-mode laser is developed. In addition, we experimentally demonstrated a simple and general algorithm for wavelength tuning controlled by two electrodes synchronously, and realized quasi-continuous tuning of single-mode wavelength in mid-infrared interband cascade laser based on the V-coupled cavity configuration for the first time. In the tuning process, the injection current of the short cavity remains unchanged, and the stepped increase of the long cavity current is equivalent to the realization of discrete tuning with the channel spacing of 1.1 nm determined by the short cavity. With the increase of the injection current of the coupler electrode while fixing the long cavity current, the thermo-optic effect caused by the coupler current will cause the refractive index of the two FP cavities to change together, thus realizing the fine tuning of the laser wavelength. A total tuning range of 53.2 nm has been achieved, from 2.8244 mu m to 2.8776 mu m, with the temperature adjusted from 110K to 120K.
Fast Frequency Tuning Characteristics of a FM Laser Based on the Integrated MQW DFB Laser/ea Modulator Device

J Cai,Z Chen,X Ji,Y Sun,J Lin,X Zhao,X Yu,J Zhang,J Yan,M Raj,FS Choa

DOI: https://doi.org/10.1109/leos.2003.1252962

2003-01-01

Abstract:Using the selective-area-growth (SAG) technique we have recently successfully fabricated FM lasers based on the integrated DFB/EA modulator devices. The InGaAs/InGaAsP MQW device with a separate confined heterostructure (SCH) and a planar semiinsulating buried-heterostructure (BH), was grown in one primary growth by low-pressure MOCVD. The lasing wavelength is around 1.551 μm.
The Wavelength Tuning Performance of Narrow Linewidth Laser-Diode Coupled to an External High-Q Si3N4 Micro-Ring Resonator

Qi Jing,Jiachen Li,Baoyu Zhang,Yu Li,Sigang Yang,Hongwei Chen,Minghua Chen

DOI: https://doi.org/10.1117/12.2600771

2021-01-01

Abstract:A hybrid integrated tunable narrow-linewidth laser is demonstrated in this paper. The hybrid laser comprises a commercial DFB laser butt-coupled to an external cavity with a micro-ring resonator. A transfer matrix model has been presented and the wavelength performance of the laser has been analyzed. In the experiment, the hybrid laser Lorentzian linewidth is ~5KHz and the tuning range is ~2.75 nanometer.
Tunable V-Cavity Laser Based on Half-wave Multimode Interference Reflector

Qi Chen,Yuqing Jiao,Zhuping Fan,Jinsheng Ni,Jian-Jun He

DOI: https://doi.org/10.1117/12.2575010

2019-01-01

Abstract:We report a tunable V-cavity laser based on half-wave multimode interference reflector. Wavelength tuning of 39 channels is obtained with side mode suppression ratio around 38dB and the output power can reach 14mW.
Widely Tunable Laser Using Reflecting Fabry–Perot Filters with Lossy Half-Wave Trenches

Zhipeng Hu,Xiaolu Liao,Xiaobo Zhang,Jian-Jun He

DOI: https://doi.org/10.1109/jphot.2017.2766878

IF: 2.4

2017-01-01

IEEE Photonics Journal

Abstract:We report the design and experimental results of a widely tunable three-section laser by using reflecting Fabry-Perot filters with deeply etched lossy half-wave coupling trenches. Good performance in side-mode suppression ratio and wavelength tuning range has been demonstrated experimentally. By introducing moderate coupling loss in the half-wave coupling trenches, high-mode selectivity can be achieved. The single-mode selectivity can be further improved by introducing slight gain in the Fabry-Perot filters. Electrical tuning of 12 channels covering as large as 84-nm wavelength range with side-mode suppression ratio up to 48 dB has been demonstrated. The large wavelength tuning range is a result of large temperature induced gain spectrum shift, which is verified by amplified spontaneous emission measurements
Dual Wavelength Slot Coupled Fabry-Perot Semiconductor Laser

Zhipeng Hu,Lin Li,Xiaobo Zhang,Jian-Jun He

DOI: https://doi.org/10.1109/piers.2016.7735465

2016-01-01

Abstract:We present the device fabrication and experimental results of a dual wavelength slot coupled semiconductor laser for photonic millimeter-wave generation. The threshold current of the laser is about 35 mA. Dual-mode lasing with wavelength difference around 0.35nm was realized with SMSR better than 28 dB. By tuning the bias currents of the laser sections, the wavelength detuning of the doublet mode can be continuously tuned from 0.3nm to 0.42nm with SMSR better than 25 dB, corresponding to a frequency difference between 37.5 GHz and 52.5 GHz.

Double Half-Wave-Coupled Rectangular Ring-Fp Semiconductor Laser With 19-Nm Quasi-Continuous Tuning Range

Double Half-Wave-Coupled Rectangular Ring-Fp Laser With 35x100ghz Wavelength Tuning

Double Half-Wave-Coupled Rectangular Ring-FP Laser With $35\times 100$ GHz Wavelength Tuning

Half-Wave-Coupled Ring-FP Laser with 50-Channel 100-Ghz-spaced Wavelength Tuning

Single-electrode-controlled 14×200ghz Digitally Wavelength Switchable Half-Wave Coupled Rectangular Ring-Fp Semiconductor Laser

50×100GHz wavelength tuning in rectangular ring-FP semiconductor laser

Widely Tunable Semiconductor Laser Based on Double Half-Wave-Coupled Rectangular Ring Resonators

Mode Selection in InGaAs/InGaAsP Quantum Well Photonic Crystal Lasers Based on Coupled Double-Heterostructure Cavities.

40Nm Quasi-Continuous Wavelength Tuning of V-cavity Semiconductor Laser

Simple and Compact Tunable Semiconductor Lasers Based on Novel Half-Wave Coupler

Experimental demonstration of a widely tunable two-section DFB laser

Tunable Coupled-Cavity Semiconductor Laser Based on a Half-Wave Bow-Tie Coupler

Wavelength Switchable Semiconductor Laser Based on Half-Wave Coupled Fabry–Pérot and Rectangular Ring Resonators

Tunable Single-Mode Half-Wave Coupled Laser Using Two Back-to-Back Corner-Connected TIR Reflectors

Tunable V-Cavity Semiconductor Laser And Modules

Quasi-Continuous Wavelength Tuning of Single-mode Interband Cascade Lasers Based on V-coupled Cavity

Fast Frequency Tuning Characteristics of a FM Laser Based on the Integrated MQW DFB Laser/ea Modulator Device

The Wavelength Tuning Performance of Narrow Linewidth Laser-Diode Coupled to an External High-Q Si3N4 Micro-Ring Resonator

Tunable V-Cavity Laser Based on Half-wave Multimode Interference Reflector

Widely Tunable Laser Using Reflecting Fabry–Perot Filters with Lossy Half-Wave Trenches

Dual Wavelength Slot Coupled Fabry-Perot Semiconductor Laser