Abstract:The ongoing growth of data traffic from existing and new latency-sensitive applications poses a challenge to the data center network. Wavelength-routed optical circuit switching promises high bandwidth, low power and latency networking for data centers, but requires a wideband wavelength tunable source capable of nanosecond-scale hitless wavelength switching at every node. A tunable source based on DFB laser arrays is a potential candidate due to the high-speed dynamic property and high single-longitudinal-mode (SLM) stability of the DFB laser. However, the large-scale integration of the DFB laser and the high precision control of the lasing wavelength are still problems. In this work, we proposed and fabricated a monolithic integrated 16-channel DFB laser array with high SLM stability and 100-GHz channel spacing by using the reconstruction-equivalent-chirp (REC) technique. The maximum output power of each channel was above 6 mW. Based on the custom-designed fast switching drive board with a field-programmable gate array (FPGA), the switch-ON and OFF time between any pair of channel combinations were measured at less than 10 ns. Dynamic switching wavelengths remained stable and resided within the receiver bandwidth. Wavelength switching experiments for modulated light signals were done by driving the external modulator, achieving bit error performance at 1 x 10(-9) for 10 Gb/s NRZ data.

Single-electrode-controlled 14×200ghz Digitally Wavelength Switchable Half-Wave Coupled Rectangular Ring-Fp Semiconductor Laser

Half-Wave-Coupled Ring-FP Laser with 50-Channel 100-Ghz-spaced Wavelength Tuning

Wavelength Switchable Semiconductor Laser Based on Half-Wave Coupled Fabry–Pérot and Rectangular Ring Resonators

Double Half-Wave-Coupled Rectangular Ring-Fp Laser With 35x100ghz Wavelength Tuning

50×100GHz wavelength tuning in rectangular ring-FP semiconductor laser

Double Half-Wave-Coupled Rectangular Ring-FP Laser With $35\times 100$ GHz Wavelength Tuning

Single-Electrode-Controlled 26x100ghz Wavelength Switching in V-Coupled-Cavity Semiconductor Laser

Double Half-Wave-Coupled Rectangular Ring-Fp Semiconductor Laser With 19-Nm Quasi-Continuous Tuning Range

Widely Wavelength Switchable V-Coupled-Cavity Semiconductor Laser With Similar To 40 Db Side-Mode Suppression Ratio

16×100GHz digitally wavelength switchable V-coupled-cavity laser with 40dB SMSR

Widely Tunable Semiconductor Laser Based on Double Half-Wave-Coupled Rectangular Ring Resonators

Wavelength switchable semiconductor laser using half-wave V-coupled cavities.

Simple and Compact Tunable Semiconductor Lasers Based on Novel Half-Wave Coupler

Single-Electrode Controlled Four-Section Coupled-Cavity Tunable Laser

Digital Wavelength Switching by Thermal and Carrier Injection Effects in V-coupled Cavity Semiconductor Laser

Experimental Demonstration of Wavelength Channel Switching in V-coupled Cavity Semiconductor Laser

Compact Silicon Photonic Hybrid Ring External Cavity (Shrec)/ingasb-Algaassb Wavelength-Tunable Laser Diode Operating from 1881-1947 Nm

30x100ghz Digitally Wavelength Switchable V-Coupled-Cavity Laser With Cleaved Facets

Tunable Coupled-Cavity Semiconductor Laser Based on a Half-Wave Bow-Tie Coupler

Optical Circuit Switching Using REC-DFB Laser Array

Tunable V-Coupled-Cavity Semiconductor Laser Monolithically Integrated with Monitoring Photodiodes Using Deeply Etched Reflective Trenches