50×100GHz wavelength tuning in rectangular ring-FP semiconductor laser

Lin Wu,Zhipeng Hu,Jian-Jun He

DOI: https://doi.org/10.1364/cleo_si.2014.sth1g.1

2014-01-01

Abstract:We report our latest experimental results of the half-wave coupled rectangular ring-FP laser. Wavelength tuning of 50 channels covering L band at 100GHz spacing is achieved, with SMSR up to 41dB. Direct modulation at 2.5Gbps is also demonstrated.

What problem does this paper attempt to address?

Half-Wave-Coupled Ring-FP Laser with 50-Channel 100-Ghz-spaced Wavelength Tuning

Lin Wu,Zhipeng Hu,Xiaolu Liao,Jian-Jun He

DOI: https://doi.org/10.1109/jphot.2014.2345876

IF: 2.4

2014-01-01

IEEE Photonics Journal

Abstract:We report our latest experimental results of the half-wave-coupled rectangular ring-FP laser. All the waveguides of the device are active, and the thermooptic effect is employed to extend the tuning range beyond the free-spectral-range limit. Singleelectrode tuning of 20 channels with 100-GHz spacing is obtained. By combining five single-electrode-controlled tuning curves with different bias currents on fixed electrodes and with the thermoelectric cooler fixed at 20 °C, wavelength tuning of 50 channels with 100-GHz spacing covering the L-band is achieved with a side-mode suppression ratio up to 41 dB. Direct modulation at 2.5 Gb/s is also demonstrated. The simple and compact ring-FP laser has great potential as a low-cost tunable laser for many applications.
Double Half-Wave-Coupled Rectangular Ring-Fp Laser With 35x100ghz Wavelength Tuning

Lin Wu,Xiaolu Liao,Zhipeng Hu,Jian-Jun He

DOI: https://doi.org/10.1109/LPT.2015.2406709

IF: 2.6

2015-01-01

IEEE Photonics Technology Letters

Abstract:A widely wavelength tunable semiconductor laser based on two cascaded half-wave-coupled rectangular ring resonators is demonstrated. Vernier effect between two rectangular rings with perimeter of 281 and 305 mu m is employed to enlarge the tuning range. Simple fabrication process is used with all active waveguides. No epitaxial regrowth, grating, or high-resolution lithography is needed. By adjusting the injection currents applied to the cascaded rectangular rings synchronously, wavelength tuning of 35 channels with 100 GHz spacing is achieved with side mode suppression ratio up to 40.5 dB.
Double Half-Wave-Coupled Rectangular Ring-FP Laser With $35\times 100$ GHz Wavelength Tuning

Lin Wu,Xiaolu Liao,Zhipeng Hu,Jian-Jun He

DOI: https://doi.org/10.1109/LPT.2015.2406709

IF: 2.6

2015-01-01

IEEE Photonics Technology Letters

Abstract:A widely wavelength tunable semiconductor laser based on two cascaded half-wave-coupled rectangular ring resonators is demonstrated. Vernier effect between two rectangular rings with perimeter of 281 and 305 μm is employed to enlarge the tuning range. Simple fabrication process is used with all active waveguides. No epitaxial regrowth, grating, or high-resolution lithography is needed. By adjustin...
Single-electrode-controlled 14×200ghz Digitally Wavelength Switchable Half-Wave Coupled Rectangular Ring-Fp Semiconductor Laser

Lin Wu,Jianjun Meng,Jian-Jun He

DOI: https://doi.org/10.1364/acpc.2012.ath2b.7

2012-01-01

Abstract:We report our latest experimental results of the half-wave coupled rectangular ring-FP laser. Single-electrode-controlled wavelength switching over 14 channels with 200GHz spacing is demonstrated with side-mode-suppression-ratio (SMSR) up to 37dB. And the total device size is only 0.5×0.4 mm2.
Widely Tunable Semiconductor Laser Based on Double Half-Wave-Coupled Rectangular Ring Resonators

Lin Wu,Zhipeng Hu,Jian-Jun Meng,Jian-Jun He

DOI: https://doi.org/10.1364/acpc.2013.af1b.2

2013-01-01

Abstract:A widely tunable semiconductor laser based on double half-wave-coupled rectangular ring resonators is designed and simulated. By employing the Vernier effect between the rectangular ring resonators, a large tuning range of 40nm is achieved, while the corresponding threshold gain difference and the SMSR is 4.5cm−1 and 46dB, respectively.
Double Half-Wave-Coupled Rectangular Ring-Fp Semiconductor Laser With 19-Nm Quasi-Continuous Tuning Range

Mengtian Sun,Lin Wu,Xiaohai Xiong,Xiaolu Liao,Jian-Jun He

DOI: https://doi.org/10.1364/cleo_si.2015.sf1i.5

2015-01-01

Abstract:We present our latest experimental results of the double half-wave-coupled rectangular ring-FP laser in a XMD TOSA package. A 19-nm quasi-continuous tuning range with over 30dB side mode suppression ratio is obtained.
Wavelength Switchable Semiconductor Laser Based on Half-Wave Coupled Fabry–Pérot and Rectangular Ring Resonators

Lin Wu,Yin Wang,Tingting Yu,Lei Wang,Jian-Jun He

DOI: https://doi.org/10.1109/lpt.2012.2191950

IF: 2.6

2012-01-01

IEEE Photonics Technology Letters

Abstract:A wavelength switchable semiconductor laser based on half-wave coupled Fabry-Perot and rectangular ring resonators is proposed and demonstrated. The device consists of all-active waveguides to facilitate the fabrication. The cavity lengths are designed with a small difference to employ the Vernier effect to obtain large wavelength tuning. A half-wave coupler is used to produce a phase-dependent loss, thus achieving a high side-mode suppression ratio (SMSR). By adjusting the current applied to just one electrode, six-channels wavelength switching with 200-GHz spacing is measured by the carrier injection effect, with a current variation of only about 20 mA. At higher current injection level, the thermal-optic effect becomes dominant, which produced eight-channels wavelength switching in the opposite direction with a maximal SMSR of 38.5 dB.
Wide Wavelength Tuning in V-Coupled-Cavity Laser Integrated with a Fabry-Perot Filter

Xiaolu Liao,Jianjun Meng,Jian-Jun He

DOI: https://doi.org/10.1364/acpc.2015.asu3b.5

2015-01-01

Abstract:We report our experimental results on a V-coupled cavity semiconductor tunable laser integrated with a Fabry-Perot tunable filter. Wavelength tuning of 43 channels with 100GHz spacing is demonstrated with side mode suppression ratio around 40dB.
Simple and Compact V-cavity Semiconductor Laser with 50×100 GHz Wavelength Tuning.

Sen Zhang,Jianjun Meng,Shanli Guo,Lei Wang,Jian-Jun He

DOI: https://doi.org/10.1364/oe.21.013564

IF: 3.8

2013-01-01

Optics Express

Abstract:We report simple and compact V-cavity semiconductor laser capable of full-band wavelength tuning. A half-wave coupler is used to obtain high side-mode suppression ratio (SMSR) without any grating or epitaxial regrowth. Temperature induced gain spectrum shift is employed in combination with the Vernier tuning mechanism to extend the wavelength tuning range beyond the free spectral range limit. Wavelength tuning of 50 channels at 100GHz spacing with SMSR up to 38 dB has been demonstrated. We show that with a temperature variation of 35°C, the tuning range can be extended by about 15 nm, in contrast to 0.1 nm/°C for thermo-optic tuning range in grating based lasers. At a fixed temperature, consecutive wavelength tuning of 31 channels was achieved. The response time of the channel switching under the current-tuning regime is measured to be about 20μs. The large tuning range that can cover the full C-band will enable such a simple, compact and potentially low-cost tunable laser to be used in wavelength-agile access and data center networks.
Simple and Compact Tunable Semiconductor Lasers Based on Novel Half-Wave Coupler

Jian-Jun He,Xiaohai Xiong,Jianjun Meng,Lin Wu,Sen Zhang,Xiaolu Liao,Li Zou

DOI: https://doi.org/10.1117/12.2085701

2015-01-01

Abstract:Widely tunable semiconductor lasers based on a novel half-wave coupler are presented. They have been implemented in the form of half-wave coupled V-cavity and ring-FP cavities. By using the novel half-wave coupler, single-mode lasing with high side-mode-suppression-ratio is achieved. Single-electrode controlled wide-band wavelength tuning with Vernier effect is demonstrated. The full-band tuning of 50 channels with 100GHz spacing is realized by further employing temperature induced gain spectrum shift. The laser is packaged into a small-form-factor 9-pin box TOSA, and the electronic driver has been developed for the wavelength tuning and direct modulation. The advantages of compactness, fabrication simplicity, easy wavelength control and direct modulation allow the tunable lasers to be used in low-cost access and datacenter networks, as well as in portable devices for spectroscopic analysis.
Dual Wavelength Slot Coupled Fabry-Perot Semiconductor Laser

Zhipeng Hu,Lin Li,Xiaobo Zhang,Jian-Jun He

DOI: https://doi.org/10.1109/piers.2016.7735465

2016-01-01

Abstract:We present the device fabrication and experimental results of a dual wavelength slot coupled semiconductor laser for photonic millimeter-wave generation. The threshold current of the laser is about 35 mA. Dual-mode lasing with wavelength difference around 0.35nm was realized with SMSR better than 28 dB. By tuning the bias currents of the laser sections, the wavelength detuning of the doublet mode can be continuously tuned from 0.3nm to 0.42nm with SMSR better than 25 dB, corresponding to a frequency difference between 37.5 GHz and 52.5 GHz.
C Plus L-band Tunable Sub-Khz Linewidth Single Frequency Fiber Laser by Combining a Fiber Sub-Ring with a Saturable Absorber

Laiyang Dang,Dongmei Huang,Zhiyao Su,Yujia Li,Feng Li

DOI: https://doi.org/10.1016/j.optlastec.2024.111944

2025-01-01

Abstract:A sub-kHz linewidth single-frequency fiber laser that can be tuned in the full range of C + L band is proposed and experimentally demonstrated. A broad band gain fiber by bidirectional pumping combining with a wide tunable filter is used to realize 75.87 nm tuning range from 1529.98 to 1605.85 nm, which can be further improved if a wider tunable filter is available. To achieve single-frequency ultra-narrow linewidth laser operation, a ring-cavity laser configuration with a fiber sub-ring and a saturable absorber is utilized. The measured optical signal-to-noise ratio (OSNR) of the fiber laser is over 80 dB, the side mode suppression ratio (SMSR) can be improved to similar to 60 dB, and the linewidth can be narrowed to similar to 453 Hz. The output power of the laser exceeds 28 mW, and the slope efficiency is 2.05 %. This proposed fiber laser has the advantages of narrow linewidth, excellent wavelength tunability, and high output power, which is promising for the applications in optical sensing and optical communication systems.
Tunable V-Cavity Semiconductor Laser And Modules

Jian-Jun He,Xiaohai Xiong,Jianjun Meng,Sen Zhang,Xiaolu Liao,Hongli Zhu,Lin Wu,Li Zou,Lei Wang,Guoping Li

2014-01-01

Abstract:We present the principle, design, packaging and measurement results of widely tunable V-cavity lasers. By using a novel half-wave coupler, single-mode lasing with high side mode-suppression-ratio is achieved. Single-electrode controlled wide-band wavelength tuning with Vernier effect is realized. The full-band tuning of 50 channels with 100 GHz spacing is demonstrated by further employing temperature induced gain spectrum shift. The laser is packaged into a small-form-factor 9-pin TOSA, and the electronic driver has been developed for the wavelength tuning and direct modulation. The advantages of compactness, fabrication simplicity, and easy wavelength control offer great potential for the tunable laser to be used in low-cost access and data center networks, as well as in portable devices for spectroscopic analysis.
10Gb/s Direct Modulation of Widely Tunable V-Cavity-Laser with Chirp Managed Laser Technology

Jianjun Meng,Lei Wang,Jian-Jun He

DOI: https://doi.org/10.1117/12.2078176

2015-01-01

Abstract:We report direct modulation results in a simple and compact widely tunable V-cavity laser. Chirp managed laser technology has been successfully applied to the V-cavity laser with an optical spectrum reshaping filter. The tunable V-cavity-laser employs a half-wave coupler to obtain single-mode operation with high side-mode suppression ratio and the Vernier effect to extend its tuning range. It does not require any grating structure and regrowth steps. In this experiment, we achieved single-electrode controlled wavelength tuning of about 18 channels at 100GHz spacing with a fixed temperature, and 32 channels using 2 temperature settings. Well-open eye diagrams with extinction ratio above 4.3dB in all channels are observed when the laser is directly modulated at 2.5Gb/s. Although the measured small-signal frequency response is only about 5.7GHz, more than 6.7dB extinction ratio under 10Gb/s modulation rate is achieved by using the chirp managed laser technology with an optical spectrum reshaping filter placed after the output of the laser to convert the frequency chirp accompanying the direct modulation to amplitude modulation. The advantages of compactness, fabrication simplicity, easy wavelength control algorithm, and simple direct modulation offer great potential for the chirped managed V-cavity laser to be used in low-cost WDM links.
Direct Modulation of Widely Tunable V-Cavity-Laser for Low-Cost WDM Access Networks

Jianjun Meng,Hongli Zhu,Sen Zhang,Li Zou,Jian-Jun He

DOI: https://doi.org/10.1364/acpc.2013.aw4a.6

2013-01-01

Abstract:We demonstrate direct modulation in compact widely tunable V-cavity-laser. Dynamic mode hopping is avoided and well-open eye diagrams were measured for 2.5Gbps and 5Gbps after 50km and 20km transmissions, respectively.
Modeling of Widely Tunable V-cavity Semiconductor Laser Using Time-Domain Traveling-Wave Method

Lin Wu,Jian-Jun He,Dominic Gallagher

DOI: https://doi.org/10.1364/josab.32.000309

2015-01-01

Journal of the Optical Society of America B

Abstract:We investigate the static and dynamic characteristics of the widely tunable V-cavity semiconductor laser using the time-domain traveling-wave method. The theoretical model is presented. The simulation results are compared with experimental data for an all-active V-cavity laser, and good agreements are obtained. To improve the device performance, a new device structure with passive tuning waveguides is designed. The numerical results show that 21 channels can be achieved by single electrode tuning using carrier injection effect with two cavities of 420 and 440 mu m long. Dynamic wavelength switching between different channels is simulated. Mode competition is observed during the transient and the switching delay time varies from 3 to 18.5 ns for different switching paths. A simple algorithm for quasi-continuous tuning is developed for the first time by varying the injection currents on the channel selector electrode and the fine-tuning electrode synchronously. A quasi-continuous tuning of 16.8 nm is achieved with a current variation of less than 20 mA on each electrode. For direct modulation characteristics, small signal response simulation is carried out by an impulse current injection with a fast Fourier transform algorithm, and a 3 dB bandwidth of 7 GHz is obtained when biased at 100 mA. Moreover, 2.5 and 10 Gb/s direct intensity modulation are also demonstrated. The simulation results show great potential for the compact and low-cost tunable laser to be used for wavelength-agile access and data center networks, as well as biomedical applications. (C) 2015 Optical Society of America
40Nm Quasi-Continuous Wavelength Tuning of V-cavity Semiconductor Laser

Tize Li,Jianjun Meng,Jian-Jun He

DOI: https://doi.org/10.1088/1742-6596/844/1/012013

2017-01-01

Abstract:Full band quasi-continuous wavelength tuning with similar to 36dB side mode suppression ratio of V-cavity semiconductor laser is reported. A simple and general tuning algorithm employing only two electrodes to control the frequency combs shifting synchronously is presented and demonstrated, respectively.
Full-Band Tunable V-Cavity Laser for Low-Cost Access and Data Center Networks

Jian-Jun He,Wenxiong Wei,Sen Zhang,Jianjun Meng,Shanli Guo,Hongli Zhu,Li Zou

DOI: https://doi.org/10.1109/icait.2013.6621534

2013-01-01

Abstract:The principle, design and experimental results of widely tunable V-cavity lasers are reviewed. By using a novel half-wave coupler, single-mode lasing with high side-mode-suppression-ratio is achieved. Single-electrode controlled wide-band wavelength tuning is realized by employing the Vernier mechanism. The tuning range can be further extended beyond the free spectral range limit by using the effect of temperature induced gain spectrum shift. The full-band tuning of 50 channels with 100 GHz spacing is demonstrated at 1550 nm range. Similarly, 41-channel tuning with 150 GHz spacing is achieved at 870 nm. The advantages of compactness, fabrication simplicity, and easy wavelength control offer great potential for the tunable laser to be used in low-cost access and data center networks.
Tunable V-Cavity Laser Monolithically Integrated with Traveling Wave Mach-Zehnder Modulator

Qi Chen,Zhongwen Wang,Jiasheng Zhao,Jianjun Meng,Guocai Song,Jian-Jun He

DOI: https://doi.org/10.1109/lpt.2022.3198520

IF: 2.6

2022-01-01

IEEE Photonics Technology Letters

Abstract:We present the monolithic integrated widely tunable V-cavity laser and traveling wave Mach-Zehnder modulator operating in the C-band. A wide wavelength tuning of 64 channels from 1513 nm to 1565 nm is obtained with SMSRs mostly over 40 dB. The $\text{V}_{\pi }$ is 5.5 V and the static extinction ratio is 14 dB. The 3-dB electro-optic bandwidth is measured to be 14.2 GHz. By optimizing the device structure and thickness of intrinsic region on a semi-insulating substrate wafer, a theoretical bandwidth over 40 GHz can be achieved.
Fast Frequency Tuning Characteristics of a FM Laser Based on the Integrated MQW DFB Laser/ea Modulator Device

J Cai,Z Chen,X Ji,Y Sun,J Lin,X Zhao,X Yu,J Zhang,J Yan,M Raj,FS Choa

DOI: https://doi.org/10.1109/leos.2003.1252962

2003-01-01

Abstract:Using the selective-area-growth (SAG) technique we have recently successfully fabricated FM lasers based on the integrated DFB/EA modulator devices. The InGaAs/InGaAsP MQW device with a separate confined heterostructure (SCH) and a planar semiinsulating buried-heterostructure (BH), was grown in one primary growth by low-pressure MOCVD. The lasing wavelength is around 1.551 μm.

50×100GHz wavelength tuning in rectangular ring-FP semiconductor laser

Half-Wave-Coupled Ring-FP Laser with 50-Channel 100-Ghz-spaced Wavelength Tuning

Double Half-Wave-Coupled Rectangular Ring-Fp Laser With 35x100ghz Wavelength Tuning

Double Half-Wave-Coupled Rectangular Ring-FP Laser With $35\times 100$ GHz Wavelength Tuning

Single-electrode-controlled 14×200ghz Digitally Wavelength Switchable Half-Wave Coupled Rectangular Ring-Fp Semiconductor Laser

Widely Tunable Semiconductor Laser Based on Double Half-Wave-Coupled Rectangular Ring Resonators

Double Half-Wave-Coupled Rectangular Ring-Fp Semiconductor Laser With 19-Nm Quasi-Continuous Tuning Range

Wavelength Switchable Semiconductor Laser Based on Half-Wave Coupled Fabry–Pérot and Rectangular Ring Resonators

Wide Wavelength Tuning in V-Coupled-Cavity Laser Integrated with a Fabry-Perot Filter

Simple and Compact V-cavity Semiconductor Laser with 50×100 GHz Wavelength Tuning.

Simple and Compact Tunable Semiconductor Lasers Based on Novel Half-Wave Coupler

Dual Wavelength Slot Coupled Fabry-Perot Semiconductor Laser

C Plus L-band Tunable Sub-Khz Linewidth Single Frequency Fiber Laser by Combining a Fiber Sub-Ring with a Saturable Absorber

Tunable V-Cavity Semiconductor Laser And Modules

10Gb/s Direct Modulation of Widely Tunable V-Cavity-Laser with Chirp Managed Laser Technology

Direct Modulation of Widely Tunable V-Cavity-Laser for Low-Cost WDM Access Networks

Modeling of Widely Tunable V-cavity Semiconductor Laser Using Time-Domain Traveling-Wave Method

40Nm Quasi-Continuous Wavelength Tuning of V-cavity Semiconductor Laser

Full-Band Tunable V-Cavity Laser for Low-Cost Access and Data Center Networks

Tunable V-Cavity Laser Monolithically Integrated with Traveling Wave Mach-Zehnder Modulator

Fast Frequency Tuning Characteristics of a FM Laser Based on the Integrated MQW DFB Laser/ea Modulator Device