Abstract:Novel design concepts, simulations and experimental results on semiconductor lasers and integrated photonic devices are presented, for both telecom and biomedical applications. It is shown that the Vernier effect can be used to increase the tuning range of a digitally wavelength-switchable semiconductor laser, and to increase the sensitivity of passive and active waveguide sensors. The wavelength switchable laser based on V-coupled cavity has a large tolerance on the accuracy of the setting current. For the middle 50% of the current range corresponding to a wavelength channel, the wavelength varies by only ±0.01nm from the set value for 0.8nm channel spacing and the SMSR is maintained above 38dB. Wavelength switching over 8 consecutive channels is experimentally demonstrated using a single electrode control. The wavelength shift sensitivity of a waveguide sensor based on two cascaded microring resonators with Vernier effect can reach 1300nm/RIU, over an order of magnitude higher than a single ring sensor. A monolithic integrated intracavity biosensor based on V-coupled cavity laser is also proposed and analyzed. By simply detecting the power ratio of two output ports, a refractive index sensitivity in the order of 10-8 RIU can be achieved thanks to the intracavity sensing mechanism and the Vernier effect.

Dual Wavelength Slot Coupled Fabry-Perot Semiconductor Laser

Wavelength Switchable Semiconductor Laser Based on Half-Wave Coupled Fabry–Pérot and Rectangular Ring Resonators

Single-mode and Wavelength Tunable Lasers Based on Deep-Submicron Slots Fabricated by Standard UV-lithography

InGaAsP/InP Based Q-modulated Slotted Fabry-Perot Laser Employing Lossy Half-Wave Trenches

Double Half-Wave-Coupled Rectangular Ring-Fp Laser With 35x100ghz Wavelength Tuning

Single-mode Nanolasers Based on FP-WGM Hybrid Cavity Coupling.

Double Half-Wave-Coupled Rectangular Ring-FP Laser With $35\times 100$ GHz Wavelength Tuning

Tunable V-Coupled-Cavity Semiconductor Laser Monolithically Integrated with Monitoring Photodiodes Using Deeply Etched Reflective Trenches

Tunable-difference Dual Wavelength V-cavity Laser Based on Quarter-Wave Coupler

Passive Devices at 2 Μm Wavelength on 200 Mm CMOS-compatible Silicon Photonics Platform [Invited]

Narrow Linewidth Single-Mode Slotted Fabry–Pérot Laser Using Deep Etched Trenches

Widely Tunable Semiconductor Laser Based on Double Half-Wave-Coupled Rectangular Ring Resonators

50×100GHz wavelength tuning in rectangular ring-FP semiconductor laser

Simultaneous Generation of Microwave, Millimeter-Wave, and Terahertz Photonic Signal Based on Two-Color Semiconductor Laser Subject to Single-Beam Optical Injection

Wide Wavelength Tuning in V-Coupled-Cavity Laser Integrated with a Fabry-Perot Filter

Single-electrode-controlled 14×200ghz Digitally Wavelength Switchable Half-Wave Coupled Rectangular Ring-Fp Semiconductor Laser

Compact Silicon Photonic Hybrid Ring External Cavity (Shrec)/ingasb-Algaassb Wavelength-Tunable Laser Diode Operating from 1881-1947 Nm

16×100GHz digitally wavelength switchable V-coupled-cavity laser with 40dB SMSR

Single-Electrode-Controlled 26x100ghz Wavelength Switching in V-Coupled-Cavity Semiconductor Laser

Novel Semiconductor Lasers and Integrated Photonic Devices

Half-Wave-Coupled Ring-FP Laser with 50-Channel 100-Ghz-spaced Wavelength Tuning