Experimental Demonstration of Wavelength Channel Switching in V-coupled Cavity Semiconductor Laser

Jialiang Jin,Dekun Liu,Lei Wang,Jian-Jun He

DOI: https://doi.org/10.1364/iprsn.2010.jtub6

2010-01-01

Abstract:A simplified cleaved-facet version of the V-coupled cavity semiconductor laser is fabricated and tested. The wavelength switching over 8 consecutive channels by Vernier effect is demonstrated for channel spacing of 50GHz and 100GHz.

What problem does this paper attempt to address?

Experimental Demonstration of Subnano-Second Wavelength Switching in V-Coupled-Cavity Semiconductor Laser

Shanli Guo,Jianjun Meng,Lei Wang,Li Zou,Hongli Zhu,Jian-Jun He

DOI: https://doi.org/10.1364/acpc.2012.as4h.6

2012-01-01

Abstract:The tuning characteristics based on both free carrier dispersion and thermal effect induced by the tuning current of a V-coupled-cavity laser are investigated. Sub-naosecond and tens of microseconds wavelength switching time between two neighboring channels are measured, respectively.
Single-Electrode-Controlled 26x100ghz Wavelength Switching in V-Coupled-Cavity Semiconductor Laser

Lei Wang,Jialiang Jin,Jian-Jun He

2011-01-01

Abstract:We report our latest experimental results on a simple and compact wavelength switchable V-coupled cavity semiconductor laser. Discrete wavelength switching of 26 channels with 100GHz spacing is achieved with a side-mode-suppression-ratio of about 37 dB, using a single-electrode control. It is shown that the wavelength channels can be switched in opposite directions with different consecutively switchable ranges by tuning the long or short cavity.
Wavelength switchable semiconductor laser using half-wave V-coupled cavities.

Jian-Jun He,Dekun Liu

DOI: https://doi.org/10.1364/acpc.2012.as4h.1

IF: 3.8

2008-01-01

Optics Express

Abstract:A new semiconductor laser structure with digitally switchable wavelength is proposed. The device comprises two coupled c. avities with different optical path lengths, which form V-shaped branches with a reflective 2x2 half-wave optical coupler at the closed end. The reflective 2x2 coupler is designed to have a pi-phase difference between crosscoupling and self-coupling so as to produce synchronous power transfer functions. High single-mode selectivity is achieved by optimizing the coupling coefficient. The switchable wavelength range is greatly increased by using Vernier effect. Using deep-etched trenches as partial reflectors, additional waveguide branch structures are used outside the laser cavities to form a complete Mach-Zehnder interferometer, allowing space switching, variable attenuation, or high speed modulation to be realized simultaneously. Detailed design principle and numerical results are presented. (C) 2008 Optical Society of America.
16×100GHz digitally wavelength switchable V-coupled-cavity laser with 40dB SMSR

Jialiang Jin,Lei Wang,Tingting Yu,Yin Wang,Jianjun He

DOI: https://doi.org/10.1109/iqec-cleo.2011.6194175

2011-01-01

Abstract:As an alternative to sophisticated tunable laser that are currently deployed in optical networks, we present a simple and compact digitally wavelength switchable laser based on Vcoupled cavities. Single-electrode-controlled wavelength switching over 16 channels with 100GHz spacing is demonstrated for the first time with side-mode-suppression-ratio (SMSR) as high as 40dB. The fabrication process is similar to that of a Fabry-Perot laser and the device size is only 500μm×300μm. © 2011 AOS.
Digital Wavelength Switching by Thermal and Carrier Injection Effects in V-coupled Cavity Semiconductor Laser

Jialiang Jin,Lei Wang,Jianjun He

DOI: https://doi.org/10.3788/col201210.102501

2012-01-01

Abstract:Consecutive wavelength switching characteristics of a simple, compact, and digitally wavelength-switchable laser based on V-coupled cavities are reported. Wavelength switching through thermal and carrier injection effects is examined. Without using band gap engineering for the tuning section, 26- and 9-channel wavelength switching schemes are achieved via thermal and carrier injection effects, respectively. The performances of these two tuning schemes are then compared.
30x100ghz Digitally Wavelength Switchable V-Coupled-Cavity Laser With Cleaved Facets

Yuan Zhuang,Xin Zhang,Jian-Jun He

2014-01-01

Abstract:We present some latest results on the V-coupled-cavity laser (VCCL) with cleaved facets. Over 30 channels with 100GHz spacing and side-mode-suppression-ratio over 30dB are achieved with single electrode tuning. The fabrication process is the same as that of a Fabry-Perot laser and the device size is only 500 mu m x 300 mu m.
Widely Wavelength Switchable V-Coupled-Cavity Semiconductor Laser With Similar To 40 Db Side-Mode Suppression Ratio

Jialiang Jin,Lei Wang,Tingting Yu,Yin Wang,Jian-Jun He

DOI: https://doi.org/10.1364/OL.36.004230

IF: 3.6

2011-01-01

Optics Letters

Abstract:We report the first experimental demonstration of a single-electrode-controlled digitally wavelength switchable V-coupled-cavity laser with high side-mode-suppression-ratio (SMSR) in the 40 dB range. Sixteen-channel and twenty-six channel wavelength switchable lasers with 100 GHz spacing are demonstrated with the maximal SMSR of 40 dB and 37 dB, respectively. They do not require complex gratings, multiple epitaxial growths, or complex tuning algorithms. The device size is only 500 mu m x 300 mu m. Such a simple, compact, and high-performance laser has great potential as a low-cost alternative to existing complex tunable lasers for wide deployment in optical networks and beyond. (C) 2011 Optical Society of America
Wavelength Switching and All-Optical Flip-Flop in Tunable V-cavity Laser

Jian-Jun He

DOI: https://doi.org/10.1109/piers.2016.7734973

2016-01-01

Abstract:With the development of intelligent broadband optical networks, tunable semiconductor lasers are becoming more and more important for wavelength routing and signal processing. A simple and compact widely tunable laser has recently been developed using half-wave coupled V-cavity. The size of the chip is only about 500 μm×300 μm, and the fabrication process is similar to a simple Fabry-Perot laser. It does not require any grating or epitaxial regrowth, and the wavelength can be switched from channel to channel using a single electrode control. The wavelength switching time is about 20 μs with current injection induced thermo-optic effect, without requiring any bandgap engineering during the device fabrication. By using quantum well intermixing to selectively blue-shift the bandgap of the waveguide in the tuning section, fast wavelength switching is realized with a response time of ~ 10 ns or less. Optical bistability is also observed in the V-cavity laser, which can be used for achieving all-optical flip-flop. The wavelength state of the V-cavity laser can be set and reset by injecting signal pulses at two different wavelengths. The pulse power for both set and reset signal is only about 1 pJ. Short response times of about 150 ps is measured for the flip-flop operation.
Carrier-induced Fast Wavelength Switching in Tunable V-cavity Laser with Quantum Well Intermixed Tuning Section.

Xin Zhang,Jian-Jun He,Neng Liu,Jan J. Dubowski

DOI: https://doi.org/10.1364/oe.23.026336

IF: 3.8

2015-01-01

Optics Express

Abstract:We report on the fast wavelength switching in V-cavity laser (VCL) with quantum well intermixed tuning section. The laser wavelength can be switched between 32 channels at 100 GHz spacing using a single electrode control. The fabrication process involves a quantum well intermixing (QWI) process using KrF laser irradiation and rapid thermal annealing (RTA). The tuning current is less than 40 mA, much lower than previously demonstrated tunable VCL based on electro-thermal-optic effect. The wavelength switching is also faster by three orders of magnitude. The dynamic switching characteristics between two channels with different numbers of intermediate channels are investigated. It shows that the switching time is about 1 ns between adjacent channels and increases up to 12 ns with increasing number of intermediate channels.
Static and Dynamic Characteristics of Digital Wavelength Switching in V-Coupled-Cavity Semiconductor Laser

Dekun Liu,Min Lou,Jian-Jun He

DOI: https://doi.org/10.1109/jlt.2009.2036942

IF: 4.7

2009-01-01

Journal of Lightwave Technology

Abstract:The static and dynamic characteristics of digital wavelength switching in a novel V-coupled-cavity semiconductor laser is investigated. In contrast to previously investigated Y-laser, the V-shaped coupler can realize not only an optimum coupling coefficient but also a ¿-phase difference between the cross-coupling and self-coupling coefficients, which results in a high single-mode selectivity. It is shown that while switching to an optimal current value results in the maximal output power and maximal side-mode suppression ratio (SMSR), the digitally wavelength switchable laser has a good tolerance on the accuracy of the switching current. For a current deviation corresponding to ±25% of the channel spacing, the SMSR only degrades by about 5.2 dB, while the wavelength varies by only ±0.01 nm from the set value for the case of 0.8 nm channel spacing. The dynamic properties including the switching transients and switching delay are also investigated and discussed.
Wavelength and Space Switchable Semiconductor Laser

Jian-Jun He

DOI: https://doi.org/10.1109/aoe.2007.4410880

2012-01-01

Abstract:A novel monolithic integrated wavelength and space switchable laser is presented. It consists of two V-coupled cavities with optimized coupling coefficient and phase for high single-mode selectivity. The waveguide branch structures inside and outside the cavities allow the wavelength and space switching functionalities to be realized simultaneously.
Simple and Compact V-cavity Semiconductor Laser with 50×100 GHz Wavelength Tuning.

Sen Zhang,Jianjun Meng,Shanli Guo,Lei Wang,Jian-Jun He

DOI: https://doi.org/10.1364/oe.21.013564

IF: 3.8

2013-01-01

Optics Express

Abstract:We report simple and compact V-cavity semiconductor laser capable of full-band wavelength tuning. A half-wave coupler is used to obtain high side-mode suppression ratio (SMSR) without any grating or epitaxial regrowth. Temperature induced gain spectrum shift is employed in combination with the Vernier tuning mechanism to extend the wavelength tuning range beyond the free spectral range limit. Wavelength tuning of 50 channels at 100GHz spacing with SMSR up to 38 dB has been demonstrated. We show that with a temperature variation of 35°C, the tuning range can be extended by about 15 nm, in contrast to 0.1 nm/°C for thermo-optic tuning range in grating based lasers. At a fixed temperature, consecutive wavelength tuning of 31 channels was achieved. The response time of the channel switching under the current-tuning regime is measured to be about 20μs. The large tuning range that can cover the full C-band will enable such a simple, compact and potentially low-cost tunable laser to be used in wavelength-agile access and data center networks.
Tunable V-Cavity Laser with Butt-Joint Passive Tuning Section for Fast Wavelength Switching

Xiaolu Liao,Jia Guo,Jian-Jun He

DOI: https://doi.org/10.1109/jphot.2017.2715278

IF: 2.4

2017-01-01

IEEE Photonics Journal

Abstract:We report on the fast carrier-induced wavelength switching in V-cavity laser using butt-joint passive tuning section. Using the carrier plasma based tuning effect in combination with temperature induced gain spectrum shift, over 25-nm wavelength tuning with 100 GHz channel spacing is obtained with side-mode suppression ratio up to 40 dB. Sixteen channels can be switched by using a single electrode control on the long cavity electrode and seven channels on the short cavity electrode. Mode competition is observed during the transient and the switching delay time varies from 1 to 11 ns for different switching paths.
Wavelength Switchable Semiconductor Laser Based on Half-Wave Coupled Fabry–Pérot and Rectangular Ring Resonators

Lin Wu,Yin Wang,Tingting Yu,Lei Wang,Jian-Jun He

DOI: https://doi.org/10.1109/lpt.2012.2191950

IF: 2.6

2012-01-01

IEEE Photonics Technology Letters

Abstract:A wavelength switchable semiconductor laser based on half-wave coupled Fabry-Perot and rectangular ring resonators is proposed and demonstrated. The device consists of all-active waveguides to facilitate the fabrication. The cavity lengths are designed with a small difference to employ the Vernier effect to obtain large wavelength tuning. A half-wave coupler is used to produce a phase-dependent loss, thus achieving a high side-mode suppression ratio (SMSR). By adjusting the current applied to just one electrode, six-channels wavelength switching with 200-GHz spacing is measured by the carrier injection effect, with a current variation of only about 20 mA. At higher current injection level, the thermal-optic effect becomes dominant, which produced eight-channels wavelength switching in the opposite direction with a maximal SMSR of 38.5 dB.
Novel Semiconductor Lasers and Integrated Photonic Devices

Jian-Jun He,Jialiang Jin,Dekun Liu,Lei Jin,Min Lou,Tingting Yu,Lei Wang

DOI: https://doi.org/10.1117/12.873899

2010-01-01

Abstract:Novel design concepts, simulations and experimental results on semiconductor lasers and integrated photonic devices are presented, for both telecom and biomedical applications. It is shown that the Vernier effect can be used to increase the tuning range of a digitally wavelength-switchable semiconductor laser, and to increase the sensitivity of passive and active waveguide sensors. The wavelength switchable laser based on V-coupled cavity has a large tolerance on the accuracy of the setting current. For the middle 50% of the current range corresponding to a wavelength channel, the wavelength varies by only ±0.01nm from the set value for 0.8nm channel spacing and the SMSR is maintained above 38dB. Wavelength switching over 8 consecutive channels is experimentally demonstrated using a single electrode control. The wavelength shift sensitivity of a waveguide sensor based on two cascaded microring resonators with Vernier effect can reach 1300nm/RIU, over an order of magnitude higher than a single ring sensor. A monolithic integrated intracavity biosensor based on V-coupled cavity laser is also proposed and analyzed. By simply detecting the power ratio of two output ports, a refractive index sensitivity in the order of 10-8 RIU can be achieved thanks to the intracavity sensing mechanism and the Vernier effect.
All-Optical Wavelength Conversion Using Widely Tunable V-Cavity Semiconductor Laser

Yu Zhu,Yingchen Wu,Lin Wu,Jian-Jun He

DOI: https://doi.org/10.1364/acpc.2014.ath3a.47

2014-01-01

Abstract:We demonstrate a simple wavelength converter exploiting injection-induced wavelength switching in V-cavity laser. A 2.5Gb/s non-return-to-zero (NRZ) channel-to-channel wavelength conversion has been modeled using time-domain traveling-wave method and well-open eye diagrams have been experimentally measured.
Modeling of Widely Tunable V-cavity Semiconductor Laser Using Time-Domain Traveling-Wave Method

Lin Wu,Jian-Jun He,Dominic Gallagher

DOI: https://doi.org/10.1364/josab.32.000309

2015-01-01

Journal of the Optical Society of America B

Abstract:We investigate the static and dynamic characteristics of the widely tunable V-cavity semiconductor laser using the time-domain traveling-wave method. The theoretical model is presented. The simulation results are compared with experimental data for an all-active V-cavity laser, and good agreements are obtained. To improve the device performance, a new device structure with passive tuning waveguides is designed. The numerical results show that 21 channels can be achieved by single electrode tuning using carrier injection effect with two cavities of 420 and 440 mu m long. Dynamic wavelength switching between different channels is simulated. Mode competition is observed during the transient and the switching delay time varies from 3 to 18.5 ns for different switching paths. A simple algorithm for quasi-continuous tuning is developed for the first time by varying the injection currents on the channel selector electrode and the fine-tuning electrode synchronously. A quasi-continuous tuning of 16.8 nm is achieved with a current variation of less than 20 mA on each electrode. For direct modulation characteristics, small signal response simulation is carried out by an impulse current injection with a fast Fourier transform algorithm, and a 3 dB bandwidth of 7 GHz is obtained when biased at 100 mA. Moreover, 2.5 and 10 Gb/s direct intensity modulation are also demonstrated. The simulation results show great potential for the compact and low-cost tunable laser to be used for wavelength-agile access and data center networks, as well as biomedical applications. (C) 2015 Optical Society of America
10Gb/s Direct Modulation of Widely Tunable V-Cavity-Laser with Chirp Managed Laser Technology

Jianjun Meng,Lei Wang,Jian-Jun He

DOI: https://doi.org/10.1117/12.2078176

2015-01-01

Abstract:We report direct modulation results in a simple and compact widely tunable V-cavity laser. Chirp managed laser technology has been successfully applied to the V-cavity laser with an optical spectrum reshaping filter. The tunable V-cavity-laser employs a half-wave coupler to obtain single-mode operation with high side-mode suppression ratio and the Vernier effect to extend its tuning range. It does not require any grating structure and regrowth steps. In this experiment, we achieved single-electrode controlled wavelength tuning of about 18 channels at 100GHz spacing with a fixed temperature, and 32 channels using 2 temperature settings. Well-open eye diagrams with extinction ratio above 4.3dB in all channels are observed when the laser is directly modulated at 2.5Gb/s. Although the measured small-signal frequency response is only about 5.7GHz, more than 6.7dB extinction ratio under 10Gb/s modulation rate is achieved by using the chirp managed laser technology with an optical spectrum reshaping filter placed after the output of the laser to convert the frequency chirp accompanying the direct modulation to amplitude modulation. The advantages of compactness, fabrication simplicity, easy wavelength control algorithm, and simple direct modulation offer great potential for the chirped managed V-cavity laser to be used in low-cost WDM links.
Tunable V-Cavity Semiconductor Laser And Modules

Jian-Jun He,Xiaohai Xiong,Jianjun Meng,Sen Zhang,Xiaolu Liao,Hongli Zhu,Lin Wu,Li Zou,Lei Wang,Guoping Li

2014-01-01

Abstract:We present the principle, design, packaging and measurement results of widely tunable V-cavity lasers. By using a novel half-wave coupler, single-mode lasing with high side mode-suppression-ratio is achieved. Single-electrode controlled wide-band wavelength tuning with Vernier effect is realized. The full-band tuning of 50 channels with 100 GHz spacing is demonstrated by further employing temperature induced gain spectrum shift. The laser is packaged into a small-form-factor 9-pin TOSA, and the electronic driver has been developed for the wavelength tuning and direct modulation. The advantages of compactness, fabrication simplicity, and easy wavelength control offer great potential for the tunable laser to be used in low-cost access and data center networks, as well as in portable devices for spectroscopic analysis.
Full-Band Tunable V-Cavity Laser for Low-Cost Access and Data Center Networks

Jian-Jun He,Wenxiong Wei,Sen Zhang,Jianjun Meng,Shanli Guo,Hongli Zhu,Li Zou

DOI: https://doi.org/10.1109/icait.2013.6621534

2013-01-01

Abstract:The principle, design and experimental results of widely tunable V-cavity lasers are reviewed. By using a novel half-wave coupler, single-mode lasing with high side-mode-suppression-ratio is achieved. Single-electrode controlled wide-band wavelength tuning is realized by employing the Vernier mechanism. The tuning range can be further extended beyond the free spectral range limit by using the effect of temperature induced gain spectrum shift. The full-band tuning of 50 channels with 100 GHz spacing is demonstrated at 1550 nm range. Similarly, 41-channel tuning with 150 GHz spacing is achieved at 870 nm. The advantages of compactness, fabrication simplicity, and easy wavelength control offer great potential for the tunable laser to be used in low-cost access and data center networks.

Experimental Demonstration of Wavelength Channel Switching in V-coupled Cavity Semiconductor Laser

Experimental Demonstration of Subnano-Second Wavelength Switching in V-Coupled-Cavity Semiconductor Laser

Single-Electrode-Controlled 26x100ghz Wavelength Switching in V-Coupled-Cavity Semiconductor Laser

Wavelength switchable semiconductor laser using half-wave V-coupled cavities.

16×100GHz digitally wavelength switchable V-coupled-cavity laser with 40dB SMSR

Digital Wavelength Switching by Thermal and Carrier Injection Effects in V-coupled Cavity Semiconductor Laser

30x100ghz Digitally Wavelength Switchable V-Coupled-Cavity Laser With Cleaved Facets

Widely Wavelength Switchable V-Coupled-Cavity Semiconductor Laser With Similar To 40 Db Side-Mode Suppression Ratio

Wavelength Switching and All-Optical Flip-Flop in Tunable V-cavity Laser

Carrier-induced Fast Wavelength Switching in Tunable V-cavity Laser with Quantum Well Intermixed Tuning Section.

Static and Dynamic Characteristics of Digital Wavelength Switching in V-Coupled-Cavity Semiconductor Laser

Wavelength and Space Switchable Semiconductor Laser

Simple and Compact V-cavity Semiconductor Laser with 50×100 GHz Wavelength Tuning.

Tunable V-Cavity Laser with Butt-Joint Passive Tuning Section for Fast Wavelength Switching

Wavelength Switchable Semiconductor Laser Based on Half-Wave Coupled Fabry–Pérot and Rectangular Ring Resonators

Novel Semiconductor Lasers and Integrated Photonic Devices

All-Optical Wavelength Conversion Using Widely Tunable V-Cavity Semiconductor Laser

Modeling of Widely Tunable V-cavity Semiconductor Laser Using Time-Domain Traveling-Wave Method

10Gb/s Direct Modulation of Widely Tunable V-Cavity-Laser with Chirp Managed Laser Technology

Tunable V-Cavity Semiconductor Laser And Modules

Full-Band Tunable V-Cavity Laser for Low-Cost Access and Data Center Networks