Abstract:We investigate the static and dynamic characteristics of the widely tunable V-cavity semiconductor laser using the time-domain traveling-wave method. The theoretical model is presented. The simulation results are compared with experimental data for an all-active V-cavity laser, and good agreements are obtained. To improve the device performance, a new device structure with passive tuning waveguides is designed. The numerical results show that 21 channels can be achieved by single electrode tuning using carrier injection effect with two cavities of 420 and 440 mu m long. Dynamic wavelength switching between different channels is simulated. Mode competition is observed during the transient and the switching delay time varies from 3 to 18.5 ns for different switching paths. A simple algorithm for quasi-continuous tuning is developed for the first time by varying the injection currents on the channel selector electrode and the fine-tuning electrode synchronously. A quasi-continuous tuning of 16.8 nm is achieved with a current variation of less than 20 mA on each electrode. For direct modulation characteristics, small signal response simulation is carried out by an impulse current injection with a fast Fourier transform algorithm, and a 3 dB bandwidth of 7 GHz is obtained when biased at 100 mA. Moreover, 2.5 and 10 Gb/s direct intensity modulation are also demonstrated. The simulation results show great potential for the compact and low-cost tunable laser to be used for wavelength-agile access and data center networks, as well as biomedical applications. (C) 2015 Optical Society of America

Static and Dynamic Characteristics of Digital Wavelength Switching in V-Coupled-Cavity Semiconductor Laser

Wavelength switchable semiconductor laser using half-wave V-coupled cavities.

Digital Wavelength Switching by Thermal and Carrier Injection Effects in V-coupled Cavity Semiconductor Laser

16×100GHz digitally wavelength switchable V-coupled-cavity laser with 40dB SMSR

Widely Wavelength Switchable V-Coupled-Cavity Semiconductor Laser With Similar To 40 Db Side-Mode Suppression Ratio

Single-Electrode-Controlled 26x100ghz Wavelength Switching in V-Coupled-Cavity Semiconductor Laser

Experimental Demonstration of Wavelength Channel Switching in V-coupled Cavity Semiconductor Laser

Wavelength and Space Switchable Semiconductor Laser

Modeling of Widely Tunable V-cavity Semiconductor Laser Using Time-Domain Traveling-Wave Method

Novel Semiconductor Lasers and Integrated Photonic Devices

Experimental Demonstration of Subnano-Second Wavelength Switching in V-Coupled-Cavity Semiconductor Laser

Effects of the Spatial Nonuniformity of Optical Transverse Modes on the Modulation Response of Vertical-Cavity Surface-Emitting Lasers

Wavelength Switchable Semiconductor Laser Based on Half-Wave Coupled Fabry–Pérot and Rectangular Ring Resonators

Wavelength Switching and All-Optical Flip-Flop in Tunable V-cavity Laser

Tunable V-Cavity Laser with Butt-Joint Passive Tuning Section for Fast Wavelength Switching

High Single-Mode Selectivity V-cavity Tunable Semiconductor Laser Based on GaAs

Improved Half-Wave Coupled V-Cavity Laser Using Aggregating-Image Multimode Interference Coupler

Monolithically Integrated Channel-selectable Wavelength Converter Based on XAM and Q-modulation Principle

Tunable V-Cavity Semiconductor Laser And Modules

Carrier-induced Fast Wavelength Switching in Tunable V-cavity Laser with Quantum Well Intermixed Tuning Section.

Tunable Coupled-Cavity Semiconductor Laser Based on a Half-Wave Bow-Tie Coupler