Abstract:In this talk, identical epitaxial layer high speed electroabsorption (EA) modulator integrated light sources are studied systematically. Firstly, a 1.55 mu m 10 Gb/s distributed feedback (DFB) laser integrated EA modulated laser is presented, which adopts a partially gain-coupled DFB laser to improve single-mode yield. The typical measured small signal response indicates a 3 dB electrical bandwidth over 10 GHz. Secondly, a 1.55 mu m laterally coupled DFb laser is fabricated to eliminate the necessity of additional regrowth, in order to reduce the process complexity and fabrication cost. A stable single-mode operation has been demonstrated with a side mode suppression ratio over 45 dB at an injection level of 60 mA. Finally, an SOA integrated EA modulator with a planar ridge waveguide is fabricated for 40 Gb/s optical fiber communication systems. The device is chip-level packaged and tested on a coplanar waveguide based submount. The small signal frequency modulation responses of the integrated EA modulator are measured and simulated based on an equivalent circuit. The measured 3 dBe modulation bandwidth exceeds 40 GHz, and it is estimated to be over 45 GHz.

High-speed AlGaInAs-MQW integrated EA modulator/DFB laser module based on identical epitaxial layer scheme for 40 Gb/s optic fiber communication systems

40 GHz AlGaInAs Multiple-Quantum-Well Integrated Electroabsorption Modulator/Distributed Feedback Laser Based on Identical Epitaxial Layer Scheme

40 GHz light source integrated with semiconductor laser and modulator based on AlGaInAs MQW material

40 Gb/S Algainas Electroabsorption Modulated Laser Module Based on Identical Epitaxial Layer Scheme

40 Gb/s InGaAlAs EML Module Based on Identical Epitaxial Layer Integration Scheme

Fabrication and Packaging of 40-Gb/s AlGaInAs Multiple-Quantum-Well Electroabsorption Modulated Lasers Based on Identical Epitaxial Layer Scheme

High-speed (10-40 Gb/s) Electroabsorption Modulator Integrated Devices for Fiber Communications

1550 Nm InGaAsP/InP DFB+EA Integrated Light Source for Trunk Line Fiber Communication

Integrated Dual-DFB Laser for 408 GHz Carrier Generation Enabling 131 Gbit/s Wireless Transmission over 10.7 Meters.

Monolithically integrated device composed of MQW GaAlAs/GaAs gain-coupled DFB laser and electroabsorption modulator

InGaAsP Multiple-Quantum-Well Electroabsorption Modulator Integrated With V-Cavity Laser

High Speed Semiconductor Light Sources Based on Direct Modulation and External Modulation

40 Gb/s AlGaInAs Electroabsorption Modulated Laser Module with Novel Packaging Design

Fast Frequency Tuning Characteristics of a FM Laser Based on the Integrated MQW DFB Laser/ea Modulator Device

Electro-absorption Modulated 53 Gbps Widely Tunable Laser Based on Half-Wave V-coupled Cavities

STUDY ON HIGH-SPEED DFB LASER/INTEGRATED EAMODULATORS BASED ON AN IDENTICALEPITAXIAL LAYER STRUCTURE

2.5Gb/s 1.55 μm InGaAsP/InP DFB laser/electroabsorption modulator integrated device

Low-threshold DFB-laser-integrated High-Speed EA Modulators Based on Ridge Waveguide Structure by ICP Etching

Q-modulated Semiconductor Laser Using Deep Etched Subwavelength Trenches

InGaAsP/InP Based Q-modulated Slotted Fabry-Perot Laser Employing Lossy Half-Wave Trenches

2.5 Gb/s Electroabsorption Modulator Integrated with Partially Gain-Coupled Distributed Feedback Laser Fabricated Using a Very Simple Device Structure