Abstract:Low-cost tunable lasers are key enablers for wide deployment of dense wavelength division multiplexing (DWDM) technology in upcoming 5G wireless networks. Simple and compact tunable V-cavity laser (VCL) have been previously reported with direct modulation up to 10Gbps. The transmission distance was limited to below 10km due to wavelength chirp and chromatic dispersion of optical fiber in the telecom C-band. Here we present an electro-absorption modulated tunable V-cavity laser (VCL) based on InGaAlAs/InP multiple quantum wells. The modulator is monolithically integrated with the half-wave coupled VCL, which are fabricated with a single shallow etch for ridge waveguides and a single deep etch step for reflecting facets and trenches. No grating nor epitaxial regrowth is required. A deep-etched trench serves as the partial reflecting front mirror for the laser, while providing an excellent electrical isolation between the laser and the modulator. 50-channel wavelength tuning with 100 GHz spacing is achieved, with side-mode suppression ratio as high as 47 dB. Error-free transmission over 50 km is demonstrated at 10 Gbps, with receiver sensitivity better than -23 dBm.

1.55 μm InGaAsP/InP partially gain-coupled DFB laser/electroabsorption modulator integrated device

1.55 Mu M Ingaasp/Inp Partially Gain-Coupled Distributed Feedback Laser Electroabsorption Modulator Integrated Device For Trunk Line Communication

2.5Gb/s 1.55 μm InGaAsP/InP DFB laser/electroabsorption modulator integrated device

Monolithically integrated device composed of MQW GaAlAs/GaAs gain-coupled DFB laser and electroabsorption modulator

2.5 Gb/s Electroabsorption Modulator Integrated with Partially Gain-Coupled Distributed Feedback Laser Fabricated Using a Very Simple Device Structure

InGaAsP Multiple-Quantum-Well Electroabsorption Modulator Integrated With V-Cavity Laser

InGaAsP/InP Based Q-modulated Slotted Fabry-Perot Laser Employing Lossy Half-Wave Trenches

40 GHz AlGaInAs Multiple-Quantum-Well Integrated Electroabsorption Modulator/Distributed Feedback Laser Based on Identical Epitaxial Layer Scheme

Monolithic Integration of Tunable V-coupled-cavity Laser and Mach-Zehnder Modulator on Generic InP Platform

1.55-/Spl Mu/m AlGaInAs-InP Laterally Coupled Distributed Feedback Laser

1550 Nm InGaAsP/InP DFB+EA Integrated Light Source for Trunk Line Fiber Communication

1.5 μm in GaAsP/InP strained MQW gain-coupled DFB laser with an improved periodically modulated injection-carrier grating

Tunable V-Coupled-Cavity Semiconductor Laser Monolithically Integrated with Monitoring Photodiodes Using Deeply Etched Reflective Trenches

Electro-absorption Modulated Tunable V-cavity Laser

40 Gb/S Algainas Electroabsorption Modulated Laser Module Based on Identical Epitaxial Layer Scheme

InAsP/InGaAsP quantum-well 1.3 [micro sign]m vertical-cavity surface-emitting lasers

Low-threshold DFB-laser-integrated High-Speed EA Modulators Based on Ridge Waveguide Structure by ICP Etching

1.55μm InGaAsP/InP strained MQN-coupled DFB laser with an improved injection-carrier grating

Optical and electrical properties of bandgap shifted 1.55-/spl mu/m laser diodes

40 GHz light source integrated with semiconductor laser and modulator based on AlGaInAs MQW material

High-speed (10-40 Gb/s) Electroabsorption Modulator Integrated Devices for Fiber Communications