Abstract:Diffused quantum wells (DFQW) optical devices have been widely investigated for use in optical electronics integrated circuits. In this paper, we report on the performance of five-period (200 Angstrom In0.53Ga0.47As0.57P0.43 barrier and 60 Angstrom In0.53Ga0.47As well) DFQW optical amplifiers and modulators. The results show that the QW amplifiers and modulators maintain at single guiding mode operation after the QW structure has been annealed. The tuning range of the operational wavelength of QW optical amplifiers is 34meV without a significant degradation in the modal gain peak by interdiffusing the QWs. The QW interdiffusion was accomplished by P+ ion implantation to the upper region of the top cladding layer of the multilayer structure and followed by rapid thermal annealing such that the implanted ions did not damage the QW structures. The I-V characteristics of the implanted QW are similar to that of the unimplanted. Concerning the TE electro-absorptive modulation, a large contrast ratio (CR) of 35dB can be obtained at lambda (op) = 1.55 mum under a small bias of -1.5V for a 500 mum long modulator. For TM mode, a slightly higher CR of 37dB can be obtained at the operation wavelength although the reverse bias voltage is double.

Theoretical analysis of InGaAsP/InGaAsP multiple-quantum-wells electroabsorption modulators for the application of high-speed low driving voltage integrated light source

Theoretical Analysis of Polarization Insensitive InGaAsP Multiple-Quantum-Wells Eletroabsorption Modulators with Negative Chirp

InGaAs/InGaAsP Diffused Quantum Wells Optical Amplifiers and Modulators

Modulation Properties of Multi Quantum Wells Laser Analyzed by A Three-Level Model in Spice

Optimization of Multiple Quantum Well Electroabsorption Modulators Based on Transmission Performance Simulation

InGaAsP Multiple-Quantum-Well Electroabsorption Modulator Integrated With V-Cavity Laser

The Optical Waveguide Design Of Quantum Well Electroabsorption Optical Modulator

Optimization Of Wavelength Detuning Of High Speed Electroabsorption Modulators For Better Transmission Capability

Q-modulated Semiconductor Laser Using Deep Etched Subwavelength Trenches

40 GHz AlGaInAs Multiple-Quantum-Well Integrated Electroabsorption Modulator/Distributed Feedback Laser Based on Identical Epitaxial Layer Scheme

Polarization Insensitive InGaAs/InGaAsP/InP Amplifiers Using Quantum Well Intermixing

Proposal for $Q$ -Modulated Semiconductor Laser

40 GHz light source integrated with semiconductor laser and modulator based on AlGaInAs MQW material

InGaAsP/InP Based Q-modulated Slotted Fabry-Perot Laser Employing Lossy Half-Wave Trenches

Low drive voltage optical phase modulator with novel InGaAlAs/InAlAs multiple-quantum-barrier based n-i-n heterostructure.

High Speed Electro-Absorption Modulators for Digital and Analog Optical Fiber Communications

Travelling wave analysis on high-speed performance of Q-modulated distributed feedback laser.

Monolithically integrated device composed of MQW GaAlAs/GaAs gain-coupled DFB laser and electroabsorption modulator

Q-modulated Semiconductor Laser

Modal Gain Characteristics of a 2 Μm InGaSb/AlGaAsSb Passively Mode-Locked Quantum Well Laser

Design and Improvement of InP-based Traveling Wave Mach-Zehnder Modulator for Monolithic Integrated with V-cavity Laser