Abstract:Silicon nitride (SiN) emerges as an important platform for ultralow loss photonic integrations with complementary metal-oxide-semiconductor compatibility. However, active devices, such as modulators, are difficult to realize on pure SiN due to the lack of any electro-optic (EO) properties of the material. Here, an SiN and lithium niobate (LN) heterogenous integration platform supporting high-performance EO modulators on SiN waveguide circuits is introduced. An efficient evanescent coupling structure is realized for low-loss light transitions between the SiN waveguide and the LN ridge waveguide with a measured mode transition loss of only 0.4 dB. Based on this heterogeneous platform, an EO Mach-Zender interference modulator on SiN is built with unprecedented loss, efficiency, and bandwidth performances. A half-wave voltage of 4.3 V with a modulation bandwidth of 37 GHz and an overall insertion loss of 1 dB is measured for a 7-mm long device. Data transmission up to 128 Gb s(-1) with a bit-error-rate of <2.4 x 10(-4) is also demonstrated.

Novel Planar Electrode Structure for High-Speed (>40 GHz) Electroabsorption Modulators

High-Performance Electro-Optic Modulator on Silicon Nitride Platform with Heterogeneous Integration of Lithium Niobate

High-speed (>40 GHz) Integrated Electroabsorption Modulator Based on Identical Epitaxial Layer Approach

A Novel Electrode Structure with a Reverse-Biased P⿿n Diode for High Speed Polymer-Infiltrated Slot Modulators

A Wideband Electro-Optic Modulator Based on Long Range Surface Plasmon Resonances

High-Speed Coplanar Waveguide Based Submount for 40 Gbit/s Electroabsorption Modulator

Low-threshold DFB-laser-integrated High-Speed EA Modulators Based on Ridge Waveguide Structure by ICP Etching

Polymeric Electro-optic Modulators with Coplanar Waveguide Traveling-wave Electrode

Optimized Electrode Structure for a High‐q Electro‐optic Microdisk‐based Optical Phase Modulator

Bing Xiong, Jianbo Tian, Jian Wang, Pengfei Cai, Changzheng Sun

The All-Fiber Electro-Absorption Modulator Based on Quadri-Layer Graphene

HIGH-SPEED Al2O3 -BASED SUBMOUNT FOR 40Gb/s ELECTROABSORPTION MODULATORS

Design of hybrid structure for fast and deep surface plasmon polariton modulation.

30GHz Ge electro-absorption modulator integrated with 3 μm silicon-on-insulator waveguide

High Speed Electro-Absorption Modulators for Digital and Analog Optical Fiber Communications

Analysis of Electrooptic Modulator With 1-D Slotted Photonic Crystal Nanobeam Cavity

Monolayer WS2 based electro-absorption modulator

Design and optimization of an arbitrarily segmented traveling wave electrode for an ultrahigh speed electroabsorption modulator

Ultracompact Electrooptic Silicon Modulator With Horizontal Photonic Crystal Slotted Slab

A Graphene-Based All-Fiber Electro-Absorption Modulator

Low Driving Voltage Band-Filling-Based Iii-V-On-Silicon Electroabsorption Modulator