Abstract:Electro-optic (EO) modulators with a high modulation bandwidth are indispensable parts of an optical interconnect system. A key requirement for an energy-efficient EO modulator is the low drive voltage, which can be provided using a standard complementary metal oxide semiconductor circuity without an amplifying driver. Thin-film lithium niobate has emerged as a new promising platform, and shown its capable of achieving driverless and high-speed EO modulators. In this paper, we report a compact high-performance modulator based on the thin-film lithium niobate platform on a silicon substrate. The periodic capacitively loaded travelling-wave electrode is employed to achieve a large modulation bandwidth and a low drive voltage, which can support a driverless single-lane 100Gbaud operation. The folded modulation section design also helps to reduce the device length by almost two thirds. The fabricated device represents a large EO bandwidth of 45GHz with a half-wave voltage of 0.7V. The driverless transmission of a 100Gbaud 4-level pulse amplitude modulation signal is demonstrated with a power consumption of 4.49fj/bit and a bit-error rate below the KP4 forward-error correction threshold of 2.4×10−4.

Bing Xiong, Jianbo Tian, Jian Wang, Pengfei Cai, Changzheng Sun

High-Speed Coplanar Waveguide Based Submount for 40 Gbit/s Electroabsorption Modulator

HIGH-SPEED Al2O3 -BASED SUBMOUNT FOR 40Gb/s ELECTROABSORPTION MODULATORS

High-Performance Electro-Optic Modulator on Silicon Nitride Platform with Heterogeneous Integration of Lithium Niobate

Novel Low-Cost Wideband Si-Based Submount for 40 Gb/S Optoelectronic Devices

Design and fabrication of heat sink with impedance matching circuit for high-speed EA modulators

High-speed (10-40 Gb/s) Electroabsorption Modulator Integrated Devices for Fiber Communications

Novel Planar Electrode Structure for High-Speed (>40 GHz) Electroabsorption Modulators

Resonance Suppression of Grounded Coplanar Waveguide in Submount for 40 Gb/s Optoelectronic Modules

A Wideband Electro-Optic Modulator Based on Long Range Surface Plasmon Resonances

Gain-Coupled 4×56 Gb/s EML Array with Optimized Bonding-Wire Inductance

High Speed Electro-Absorption Modulators for Digital and Analog Optical Fiber Communications

Compact 100gbaud Driverless Thin-Film Lithium Niobate Modulator on a Silicon Substrate

Fabrication and Packaging of 40-Gb/s AlGaInAs Multiple-Quantum-Well Electroabsorption Modulated Lasers Based on Identical Epitaxial Layer Scheme

60 Gbit/s Silicon Modulators with Enhanced Electro-Optical Efficiency

Sub-terahertz Bandwidth Capactively-Loaded Thin-Film Lithium Niobate Electro-Optic Modulators Based on an Undercut Structure

40 Gb/s InGaAlAs EML Module Based on Identical Epitaxial Layer Integration Scheme

30GHz Ge electro-absorption modulator integrated with 3 μm silicon-on-insulator waveguide

Low-threshold DFB-laser-integrated High-Speed EA Modulators Based on Ridge Waveguide Structure by ICP Etching

High-speed (>40 GHz) Integrated Electroabsorption Modulator Based on Identical Epitaxial Layer Approach

40 Gb/S Algainas Electroabsorption Modulated Laser Module Based on Identical Epitaxial Layer Scheme