Abstract:The optical and electrical properties of phosphorus doped silicon carbide thin films with various C /Si ratio were studied before and after thermally annealing .It is found that with decreasing the C/Si ratio for as‐deposited samples ,the optical band gap is gradually decreased and dark conductivity increased accordingly .As high as 6 to 7 orders of magnitude of material dark conductivity improvement is a remarkable result of 1000 ℃ annealing .With de‐creasing the C/Si ratio for annealed samples ,the Si-C bond density is decreased in company with the enhancement of crystal degree and optical band gap ,and also with improvements of main carrier mobility as well as dark conductivity .Besides ,influences of the C/Si ratio to the phosphorus dopant activation effect and to the material con‐ductivity activation energy are also significant .The dopant activation effect changes in the form of the carrier concen‐tration ,which increases firstly and then decreases slightly with reducing the C/Si ratio ,representing a close relation to the crystal degree .Furthermore ,the conductivity activation energy of annealed samples is reduced with decreasing the C/Si ratio ,the Fermi level consequently rises very close to the bottom of the conduction band or even enters into the conduction band ,indicating the formation of heavily doped semiconductor materials .

Doping of Nanocrystalline Four Hexagnol Silicon Carbide Films

The Location and Doping Effect of Boron in Si Nanocrystals Embedded Silicon Oxide Film

Boron- and Phosphorus-Hyperdoped Silicon Nanocrystals

Doping silicon nanocrystals with boron and phosphorus

High-conductive Nanocrystalline Silicon with Phosphorous and Boron Doping

Formation and Electrical Properties of High Conductively Doped Nanocrystalline Silicon Embedded in Amorphous Silicon Carbide

Doping Efficiency, Dopant Location, and Oxidation of Si Nanocrystals

First-Principles Study of 2.2 Nm Silicon Nanocrystals Doped with Boron

Ab Initio Molecular Dynamics Simulation Study on Phosphorus/Boron Co-Doped Si Nanocrystals/SiO2 Core/Shell Structures

Investigation of Microstructure and Photoelectric Properties of Boron- Doped Amorphous Silicon Films

Density Functional Theory Study on the B Doping and B/P Codoping of Si Nanocrystals Embedded in SiO2

Doping Effects in Co-deposited Mixed Phase Films of Hydrogenated Amorphous Silicon Containing Nanocrystalline Inclusions

Influence of Boron-doping on Electrical Properties of Na-Si:H Thin Film Prepared by PECVD

Formation of High Conductive Nano-Crystalline Silicon Embedded in Amorphous Silicon-Carbide Films with Large Optical Band Gap

The Change Of Electronic Transport Behaviors By P And B Doping In Nano-Crystalline Silicon Films With Very High Conductivities

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Comparative Study on P and B Doped Nano-Crystalline Si Multilayers

Influence of Doping and Microstructure on Electrical Properties of Doped Silicon Thin Films

Deposition and Thermoelectric Properties of N-Doped SiC Thick Films

First Principles Study on Phosphorus or Boron Doping in Si Nanocrystals with Various Sizes Embedded in SiO2 Matrix