MEMS Phase Shifter with AlSi Alloy Membrane on High-Resistivity Silicon

石艳玲,卿健,忻佩胜,朱自强,赖宗声
DOI: https://doi.org/10.3321/j.issn:0253-4177.2002.09.015
2002-01-01
Abstract:The design and fabrication of low-loss distributed MEMS phase shifter are presented. The principle for this phase shifter is that the phase velocity can be varied by mean of snapping down the membrane of MEMS loading capacitors of the transmission line. Its MEMS capacitors and control voltage are discussed in detail. Several different membranes are used as the membranes and Al0.96Si0.04 alloy shows the best performance with pulling-down voltage of the MEMs phase shifter no more than 40 V. There is a phase shift when the control voltage is only 10 V. With the phase shifter fabricated on the high-resistivity silicon (ρ>4000Ω·cm), the insert loss is very low, no more than 3 dB from 1 GHz to 40 GHz. The phase shift will be more than 25°C at 25 V.
What problem does this paper attempt to address?