An E-band Subradix Active Phase Shifter with < 0.69° RMS Phase Error and 16-Db Attenuation in 28-Nm CMOS

Kailong Zhao,Liang Qiu,Jiangbo Chen,Qianyi Dong,Yen-Cheng Kuan,Q. Jane Gu,Chunyi Song,Zhiwei Xu
DOI: https://doi.org/10.1109/ims37962.2022.9865504
2022-01-01
Abstract:This paper proposes an E-band active phase shifter, which leverages a subradix-2 gm array to achieve low gain and phase errors. The phase shifter stacks differential couplers for high precision quadrature signals. It employs extensive (2 15 ) vector modulation control states provided by the subradix-2 arrangement for high accuracy that is not available in conventional vector modulation (VM) based phase shifters. The proposed E-band phase shifter is fabricated in 28-nm CMOS with a chip area of 0.078 mm 2 . It provides a 5.625° phase accuracy with root mean square (RMS) phase error of 0.38~0.69°, and RMS gain error of 0.49~0.83 dB at 67–79 GHz. In addition, the phase shifter supports 16 dB attenuation range with a 2 dB step. Measurements show it can also provide a 1.4° phase accuracy with RMS phase error of less than 0.77°. The phase shifter consumes 28.5 mW from a 1.2 V supply.
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