CMOS-MEMS Based Optical Electrostatic Phase Shifter Array With Low Driving Voltage and High Fill Factor

Jin-Chern Chiou,Chen-Chun Hung,Li-Jung Shieh

DOI: https://doi.org/10.1109/jqe.2010.2043502

IF: 2.5

2010-09-01

IEEE Journal of Quantum Electronics

Abstract:This work develops a novel 4×4 optical phase shifting micromirror array that achieves a $\lambda/4$ vertical displacement and makes the mirror peak-to-valley deformation within $\lambda/10$ (514 nm light source). Each individual micromirror pixel is controllable and driven by an electrostatic parallel plate actuator. The mirror reflective surface is an aluminum layer with a high optical reflectivity exceeding 90%. This device achieves a high fill factor of more than 90% without an additional flip-chip bonding process due to the parallel plate actuator and the hidden suspension beam structures. The phase shifter array is fabricated using the Taiwan Semiconductor Manufacturing Company (TSMC) 0.35 $\mu{\rm m}$ 2p4m CMOS process and post-CMOS process. An in-house post-process is utilized to reserve a 40 $\mu{\rm m}$ thick bulk-silicon under the 200 $\mu{\rm m}\times \,$200 $\mu{\rm m}$ mirror. This eliminates mirror deformation from residual stress after the device is released. The micromirror demonstrates a vertical displacement of $\lambda/4$ at only 3 V and the resonant frequency is 3.6 kHz. Industry can use this phase-shifting micromirror array as a spatial light modulator in holographic data storage systems in the future.

engineering, electrical & electronic,optics,physics, applied,quantum science & technology