Electroplating Technology for Copper Interconnection in ULSI

张国海,钱鹤,夏洋,王文泉,龙世兵
DOI: https://doi.org/10.3969/j.issn.1674-4926.2001.08.028
2001-01-01
Chinese Journal of Semiconductors
Abstract:The electroplating technology is empl oyed in copper interconnection in ULSI by adding some levelers into the electroplating bath and controlling the electroplating current in three-st ep successfully.High-aspect ratio vias(1μm∶06μm) are filled without any vo ids or seams. Furthermore,the resistivity of the electroplated copper film is obtained to be 20μΩ·cm by measuring the sheet resistance.The film is proved to be of stro ng Cu(111) texture by XRD(X-ray diffraction),which is beneficial to the high electromigration resistance of ULSI interconnection.
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