Abstract:With the advancement of high-integration and high-density interconnection in chip manufacturing and packaging, Cu bumping technology in wafer- and panel- level packaging is developed to micrometer-sized structures and pitches to accommodate increased I/O numbers on high-end integrated circuits. Driven by this industrial demand, significant efforts have been dedicated to Cu electroplating techniques for improved pillar shape control and solder joint reliability, which substantially depend on additive formulations and electroplating parameters that regulate the growth morphology, crystal structure, and impurity incorporation in the process of electrodeposition. It is necessary to investigate the effect of an additive on Cu pillar electrodeposition, and to explore the Kirkendall voids formed during the reflowing process, which may result from the additive-induced impurity in the electrodeposited Cu pillars. In this work, a self-synthesized polyquaterntum (PQ) was made out with dual suppressor and leveler effects, and was combined with prototypical accelerator bis- (sodium sulfopropyl)-disulfide (SPS) for patterned Cu pillar electroplating. Then, Sn96.5/Ag3.0/Cu0.5 (SAC305) solder paste were screen printed on electroplated Cu pillars and undergo reflow soldering. Kirkendall voids formed at the joint interfaces were observed and quantified by SEM. Finally, XRD, and EBSD were employed to characterize the microstructure under varying conditions. The results indicate that PQ exhibits significant suppressive and levelled properties with the new structure of both leveler and suppressor. However, its effectiveness is dependent on liquid convection. PQ and SPS work synergistically, influencing the polarization effect in various convective environments. Consequently, uneven adsorption occurs on the surface of the Cu pillars, which results in more Kirkendall voids at the corners than at the center along the Cu pillar surface.

Influence of PUB2 on the Leveling Effect of Chip Copper Connection Electroplating: Mechanism and Applications

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Potential-Dependence Of Additives Distribution In Copper Electrodeposition Via Filling

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Electroplated Copper Additives for Advanced Packaging: A Review

Investigation of Synthesized Carbazole Derivative Cz-BPDB As a High-Performance Leveler for Copper Electroplating

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Cu Pillar Electroplating Using a Synthetic Polyquaterntum Leveler and Its Coupling Effect on SAC305/Cu Solder Joint Voiding

Competitive Effect of Leveler's Electrochemical Behavior and Impurity on Electrical Resistance of Electroplated Copper

Computational analysis and experimental evidence of two typical levelers for acid copper electroplating

Understanding Effect of Additives in Copper Electroplating Filling for Through Silicon Via

Study On Physical Properties Of Ultrasonic-Assisted Copper Electrodeposition In Through Silicon Via

Effect of the Molecular Weight of Polyethylene Glycol As Single Additive in Copper Deposition for Interconnect Metallization

Method to Improve the Process Efficiency for Copper Pillar Electroplating

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Through silicon via filling by copper electroplating in acidic cupric methanesulfonate bath

Improvement of Plating Uniformity for Copper Patterns of IC Substrate with Multi-Physics Coupling Simulation