Enhanced Cu-Cu bonding for ultrahigh-density interconnection: Co passivation bonding with non-oxidation interfaces
Xiaoyun Qi,Han Yan,Xiaohui Yuan,Yufei Bai,Tadatomo Suga,Chenxi Wang
DOI: https://doi.org/10.1016/j.apsusc.2024.161940
IF: 6.7
2024-11-28
Applied Surface Science
Abstract:Cu-based hybrid bonding, known for its high density and low latency, is widely applied in big data throughput scenarios. However, Cu joints are prone to oxidation and perform poorly at fine pitches, hindering signal transmission and leading to failures in integrated devices. One of the most promising approaches to overcome these challenges is applying a cobalt (Co) passivation layer on the Cu surface owing to its preferable electrical and anti-electromigration behavior in sub-micron scale. However, the high melting point (∼1500 °C) and inevitable oxidation of the Co film coated on Cu are scarcely evitable. In this work, a ternary plasma composed of Ar, NH 3 , and H 2 O is introduced to activate the surface of the Co-passivated Cu, facilitating bonding at a temperature of 200 °C. Significant surface and interface electrical resistivity reductions were observed, reduced to 67.5 % and less than 10 %, respectively. Additionally, tensile strength more than doubled with ternary plasma activation attributed to the continuous and tightly bonded Co-Co interface. The application of this Co-passivated Cu bonding structure is evaluated through signal integrity simulations for 3D interconnection with ultrafine pitch. In summary, this work provides guidelines for the future fabrication of high-performance interconnection structures.
chemistry, physical,physics, applied, condensed matter,materials science, coatings & films