Abstract:As the demands for portable electronic products increase, through-silicon-via (TSV)-based three-dimensional integrated-circuit (3-D IC) integration is becoming increasingly important. Micro-bump-bonded interconnection is one approach that has great potential to meet this requirement. In this paper, a 30-μm pitch chip-to-chip (C2C) interconnection with Cu/Ni/SnAg micro bumps was assembled using the gap-controllable thermal bonding method. The bonding parameters were evaluated by considering the variation in the contact resistance after bonding. The effects of the bonding time and temperature on the IMC thickness of the fabricated C2C interconnects are also investigated to determine the correlation between its thickness and reliability performance. The reliability of the C2C interconnects with the selected underfill was studied by performing a -55°C- 125°C temperature cycling test (TCT) for 2000 cycles and a 150°C high-temperature storage (HTS) test for 2000 h. The interfaces of the failed samples in the TCT and HTS tests are then inspected by scanning electron microscopy (SEM), which is utilized to obtain cross-sectional images. To validate the experimental results, finite-element (FE) analysis is also conducted to elucidate the interconnect reliability of the C2C interconnection. Results show that consistent bonding quality and stable contact resistance of the fine-pitch C2C interconnection with the micro bumps were achieved by giving the appropriate choice of the bonding parameters, and those bonded joints can thus serve as reliable interconnects for use in 3-D chip stacking.

Developments of copper-to-copper low temperature bonding technology for 3D packaging

Development of low temperature Cu Cu bonding and hybrid bonding for three-dimensional integrated circuits (3D IC)

Cu-Based Thermocompression Bonding and Cu/Dielectric Hybrid Bonding for Three-Dimensional Integrated Circuits (3D ICs) Application

Copper Bonding Technology in Heterogeneous Integration

Materials, Processing and Reliability of Low Temperature Bonding in 3D Chip Stacking

Low-Temperature Cu–Cu Direct Bonding Using Pillar–Concave Structure in Advanced 3-D Heterogeneous Integration

Recent Developments in Low Temperature Wafer Level Metal Bonding for Heterogenous Integration

A High Copper Concentration Copper-Quadrol Complex Electroless Solution for Chip Bonding Applications

Interfacial Characterization of Low-Temperature Cu-to-Cu Direct Bonding with Chemical Mechanical Planarized Nanotwinned Cu Films

Development of Low-Temperature Bonding Platform Using Ultra-Thin Area Selective Deposition for Heterogeneous Integration

Characterization of low temperature bonding with Cu nanoparticles for electronic packaging application

Electroless Silver Coating on Copper Microcones for Low-Temperature Solid-State Bonding

In Situ Study on Cu-to-Cu Thermal Compression Bonding

Low Temperature Cu-Sn Bonding By Isothermal Solidification Technology

Low Contact Resistance Copper-Copper Bonding with Selective Electroless Plating Cobalt Interlayer

3D Integration via D2D Bump-Less Cu Bonding with Protruded and Recessed Topographies

Effects of Bonding Parameters on the Reliability of Fine-Pitch Cu/Ni/SnAg Micro-Bump Chip-to-Chip Interconnection for Three-Dimensional Chip Stacking

Research of LTCC/Cu, Ag Multilayer Substrate in Microelectronic Packaging

Metallurgical aspects and joint properties of Cu-Ni-In-Cu fine-pitch interconnects for 3D integration

Low-Temperature Copper Bonding Strategy with Graphene Interlayer

Rapid and low temperature sintering bonding using Cu nanoparticle film for power electronic packaging