Properties Comparison of Electrodeposited Copper Interconncet Line by DC and Pulse Plating

Xu Saisheng,Zeng Lei,Zhang Lifeng,Zhang Wei,Wang Likang
DOI: https://doi.org/10.3969/j.issn.1003-353X.2008.12.006
2008-01-01
Abstract:Aiming at the technology demand of advanced copper interconnect,the properties of electrodeposited copper film and parameters such as resistivity,texture coefficient,grain size and surface roughness were investigated by DC plating and pulse plating respectively.The results show that at the same current density conditions,the Cu film deposited by pulse plating has lower resistivity,lower surface roughness,larger grain size and grain density,but the Cu film deposited by DC plating has better(111)preferential orientation than by pulse plating.In copper interconnect technology of ULSI,pulse plating may have a good potential prospect application.
What problem does this paper attempt to address?