Abstract:Wafer-level copper electroplating is an indispensable process in advanced packaging for manufacturing redistribution layers (RDL), micro-bumps, through silicon vias (TSV), etc., where coplanarity is a significant indicator to evaluates whether the plating thickness is uniform among different sized patterns and at different positions. Achieved through precise control of the electric field distribution, a good coplanarity can lower the reliability risks, for example, interfacial voiding or interlayer mismatch, to improve the product yield. However, with developments of greater wafer size and finer interconnect structure, higher demands are set on the material properties. Nanotwinned copper (nt-Cu) is of high-density and highly (111)-oriented coherent twin boundaries and exhibiting enhanced mechanical and electrical performances. In the present study, nt-Cu based electroplating for 8-inch RDL patterned wafer in wafer level packaging (WLP) is conducted with a proprietary plating bath on a horizontal electroplating system. Equipment setting/parameter effects such as shielding plates, circulating flow rate, and wafer spin rate are analyzed on coplanarity performance of nt-Cu. The results indicate nt-Cu microstructure can be formed throughout the wafer and the coplanarity indexed by within-die (WID) nonuniformity is manipulated below the technical threshold < 8%, which is repeatable in an 8 out of 30 random checks. This engineering research offers a pioneer practice for industrial application of nt-Cu electroplating technique.

Fabrication of High Aspect Ratio Through-Wafer Copper Interconnects by Reverse Pulse Electroplating

Influence of Electroplating Current Density on Through Silicon Via Filling

Wetting Process of Copper Filling in Through Silicon Vias

High Aspect Ratio Copper Through-Silicon-vias for 3D Integration

Moving Boundary Simulation and Experimental Verification of High Aspect-Ratio Through-Silicon-Vias for 3-D Integration

Very High Aspect Ratio (AR>10) through Glass Hole (TGH) Filling in Stagnant Condition By Using DC Plating for Advanced Interposer Applications

Copper Pulse-Reverse Current Electrodeposition to Fill Blind Vias for 3-D Tsv Integration

Copper Filling Process for Small Diameter, High Aspect Ratio Through Silicon Via (Tsv)

Silicon Micromachining Of High Aspect Ratio, High-Density Through-Wafer Electrical Interconnects For 3-D Multichip Packaging

Fast copper plating process for TSV fill

Bottom-up Copper Electroplating Using Transfer Wafers for Fabrication of High Aspect-Ratio Through-Silicon-vias

Completely Filling of Through-Silicon-Vias with High Aspect Ratio by High Cavity Physical Vapor Deposition and Electroplating

Through-silicon Via Filling Process Using Pulse Reversal Plating

Synergistic Effect of Additives on Filling of Tapered TGV Vias by Copper Electroplating

Improved Electrochemical Plating for Void-Free Copper Line in ULSI Interconnect

Copper electroplating technology for microvia filling

Copper electroplating technique for efficient manufacturing of low-cost silicon interposers

Electroplating Technology for Copper Interconnection in ULSI

Recent Advances in Electroplating of Through-Hole Copper Interconnection

Fabrication and Characterization of Annular Copper Through-Silicon Via for Passive Interposer Applications

8-inch wafer-level electroplating of nanotwinned copper redistribution layer for advanced packaging