TUNNELING TRANSPORT IN STM-TIP–NANOTUBE–SUBSTRATE SYSTEMS

G Zhang,ZL Cao,BL Gu
DOI: https://doi.org/10.1142/s0217984900000884
2000-01-01
Modern Physics Letters B
Abstract:In this paper, we considered a single-wall carbon nanotube deposited on a substrate and probed by a scanning probe. We calculated the current and differential conductance dI/dV versus the bias voltage V in this system. We found that currents through nanotubes become saturated in high voltages. This result shows the one-dimensional characteristic of carbon nanotubes. Our results are consistent with experiments which were carried out in low bias voltage regime and can be tested easily by experiments in higher bias voltage regime.
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