Transport And Tem On Individual Nanotubes And Nanotube Peapods

Dirk Obergfell,Jannik C. Meyer,ShiHe Yang,Shangfeng Yang,Siegmar Roth
DOI: https://doi.org/10.1109/nano.2004.1392450
2004-01-01
Abstract:For the first time, transport measurements in field-effect transistor configuration and TEM investigations on the same individal single-walled carbon nanotubes (SWNTs) have been performed. So far approaches for combining transport and TEM on the same nanotube only allowed for measuring the output characteristics I-sd(V-sd), i.e. the dependence of the current I-sd through the tube on the bias voltage V-sd. Applying our new method of underetching a Si/SiO2 substrate from the edge of a chip after the transport measurements, we can additionally get the transfer characteristics I-sd(V-g), i.e. the gate response of the current, which provides crucial information about the electronic properties. of the system investigated. After the transport measurements and the etching process the samples can be viewed in the TEM, which enables us to check, whether a contacted nanotube is really a single tube or a thin bundle and whether a tube is filled with fullerenes ("peapod").
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