Design of the Tunneling Microsilicon Acceleration Sensor

Deying Chen,Pansong Mao,Jianwei Shi,Tao Xiong,Shan Chi,Xu Zhang
DOI: https://doi.org/10.3969/j.issn.1000-3819.2000.04.002
2000-01-01
Abstract:The characteristics of piezoresistive, capacitive and tunneling acceleration sensors were compared, and a new structure of torsion tunneling acceleration sensor was proposed. Besides, the principle and design model of the sensor were described. Finally, the structural dimension, layout and photograph of the sample were given.
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